By Scientia Professor Sven Rogge

Preprints

Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, Single-shot single-gate RF spin readout in silicon, http://dx.doi.org/10.48550/arxiv.1809.01802

Zhang Q; Hu G; de Boo GG; Rancic M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2018, Single rare-earth ions as atomic-scale probes in ultra-scaled transistors, http://dx.doi.org/10.48550/arxiv.1803.01573

Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, Gigahertz Single-Electron Pumping Mediated by Parasitic States, http://dx.doi.org/10.48550/arxiv.1803.00791

Usman M; Voisin B; Salfi J; Rogge S; Hollenberg LCL, 2017, Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon, http://dx.doi.org/10.48550/arxiv.1706.09981

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2017, Valley filtering and spatial maps of coupling between silicon donors and quantum dots, http://dx.doi.org/10.48550/arxiv.1706.09261

Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2017, Entanglement control and magic angles for acceptor qubits in Si, http://dx.doi.org/10.48550/arxiv.1706.08858

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2017, Two-electron states of a group V donor in silicon from atomistic full configuration interaction, http://dx.doi.org/10.48550/arxiv.1703.04175

van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Lavieville R; Simmons MY; Rogge S, 2017, Spin-orbit dynamics of single acceptor atoms in silicon, http://dx.doi.org/10.48550/arxiv.1703.03538

Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies, http://dx.doi.org/10.48550/arxiv.1702.08569

Klymenko MV; Rogge S; Remacle F, 2016, Linear and planar molecules formed by coupled P donors in silicon, http://dx.doi.org/10.48550/arxiv.1611.07154

Klymenko MV; Rogge S; Remacle F, 2016, Multi-valley envelope function equations and effective potentials for P impurity in silicon, http://dx.doi.org/10.48550/arxiv.1611.05908

van der Heijden J; Tettamanzi GC; Rogge S, 2016, Dynamics of a single-atom electron pump, http://dx.doi.org/10.48550/arxiv.1607.08696

Salfi J; Tong M; Rogge S; Culcer D, 2016, Quantum Computing with Acceptor Spins in Silicon, http://dx.doi.org/10.48550/arxiv.1606.04697

Agundez R; Hill CD; Hollenberg LCL; Rogge S; Blaauboer M, 2016, Superadiabatic quantum state transfer in spin chains, http://dx.doi.org/10.48550/arxiv.1604.04885

Kobayashi T; van der Heijden J; House MG; Hile SJ; Asshoff P; Gonzalez-Zalba MF; Vinet M; Simmons MY; Rogge S, 2016, Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot, http://dx.doi.org/10.48550/arxiv.1604.04020

Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LLC, 2016, Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision, http://dx.doi.org/10.48550/arxiv.1601.02326

Rahman R; Verduijn J; Wang Y; Yin C; De Boo G; Klimeck G; Rogge S, 2015, Bulk and sub-surface donor bound excitons in silicon under electric fields, http://dx.doi.org/10.48550/arxiv.1510.00065

Hile SJ; House MG; Peretz E; Verduijn J; Widmann D; Kobayashi T; Rogge S; Simmons MY, 2015, Radio frequency reflectometry and charge sensing of a precision placed donor in silicon, http://dx.doi.org/10.48550/arxiv.1509.03315

Salfi J; Mol JA; Culcer D; Rogge S, 2015, Charge-insensitive single-atom spin-orbit qubit in silicon, http://dx.doi.org/10.48550/arxiv.1508.04259

Saraiva AL; Salfi J; Bocquel J; Voisin B; Rogge S; Capaz RB; Calderón MJ; Koiller B, 2015, Donor Wavefunctions in Si Gauged by STM Images, http://dx.doi.org/10.48550/arxiv.1508.02772

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2015, Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon, http://dx.doi.org/10.48550/arxiv.1507.06125

Purches WE; Rossi A; Zhao R; Kafanov S; Duty TL; Dzurak AS; Rogge S; Tettamanzi GC, 2015, A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures, http://dx.doi.org/10.48550/arxiv.1506.01224

Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon, http://dx.doi.org/10.48550/arxiv.1504.06370

Urdampilleta M; Chatterjee A; Lo CC; Kobayashi T; Mansir J; Barraud S; Betz AC; Rogge S; Gonzalez-Zalba MF; Morton JJL, 2015, Charge dynamics and spin blockade in a hybrid double quantum dot in silicon, http://dx.doi.org/10.48550/arxiv.1503.01049

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, http://dx.doi.org/10.48550/arxiv.1501.05669

Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, Spatially resolved resonant tunneling on single atoms in silicon, http://dx.doi.org/10.48550/arxiv.1501.05042

Fernandez-Gonzalvo X; Chen Y-H; Yin C; Rogge S; Longdell JJ, 2015, Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal, http://dx.doi.org/10.48550/arxiv.1501.02014

Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2014, Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory, http://dx.doi.org/10.48550/arxiv.1410.1951

Agundez R; Salfi J; Rogge S; Blaauboer M, 2014, Local Kondo temperatures in atomic chains, http://dx.doi.org/10.48550/arxiv.1408.6447

Rossi A; Tanttu T; Tan KY; Iisakka I; Zhao R; Chan KW; Tettamanzi GC; Rogge S; Dzurak AS; Möttönen M, 2014, An accurate single-electron pump based on a highly tunable silicon quantum dot, http://dx.doi.org/10.48550/arxiv.1406.1267

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, Spatially Resolving Valley Quantum Interference of a Donor in Silicon, http://dx.doi.org/10.48550/arxiv.1403.4648

Tettamanzi GC; Wacquez R; Rogge S, 2014, Charge Pumping Through a Single Donor Atom, http://dx.doi.org/10.48550/arxiv.1401.3080

Verduijn J; Vinet M; Rogge S, 2013, Radio-frequency dispersive detection of donor atoms in a field-effect transistor, http://dx.doi.org/10.48550/arxiv.1312.3363

Yin C; Rancic M; de Boo GG; Stavrias N; McCallum JC; Sellars MJ; Rogge S, 2013, Optical addressing of an individual erbium ion in silicon, http://dx.doi.org/10.48550/arxiv.1304.2117

Mol JA; Salfi J; Miwa JA; Simmons MY; Rogge S, 2013, Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants, http://dx.doi.org/10.48550/arxiv.1303.2712

Agundez RR; Verduijn J; Rogge S; Blaauboer M, 2013, Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system, http://dx.doi.org/10.48550/arxiv.1301.4235

Verduijn J; Agundez RR; Blaauboer M; Rogge S, 2012, Non-local coupling of two donor-bound electrons, http://dx.doi.org/10.48550/arxiv.1209.4726

Zwanenburg FA; Dzurak AS; Morello A; Simmons MY; Hollenberg LCL; Klimeck G; Rogge S; Coppersmith SN; Eriksson MA, 2012, Silicon Quantum Electronics, http://dx.doi.org/10.48550/arxiv.1206.5202

Prati E; De Michielis M; Belli M; Cocco S; Fanciulli M; Kotekar-Patil D; Ruoff M; Kern DP; Wharam DA; Verduijn A; Tettamanzi G; Rogge S; Roche B; Wacquez R; Jehl X; Vinet M; Sanquer M, 2012, Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors, http://dx.doi.org/10.48550/arxiv.1203.4811

Tettamanzi GC; Paul A; Lee S; Klimeck G; Rogge S, 2011, New tools for the direct characterisation of FinFETs, http://dx.doi.org/10.48550/arxiv.1111.5655

Lansbergen GP; Rahman R; Tettamanzi GC; Verduijn J; Hollenberg LCL; Klimeck G; Rogge S, 2011, Dopant metrology in advanced FinFETs, http://dx.doi.org/10.48550/arxiv.1111.4238

Mol JA; van der Heijden J; Verduijn J; Klein M; Remacle F; Rogge S, 2011, Balanced ternary addition using a gated silicon nanowire, http://dx.doi.org/10.48550/arxiv.1108.5527

Rahman R; Lansbergen GP; Verduijn J; Tettamanzi GC; Park SH; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2011, Electric field reduced charging energies and two-electron bound excited states of single donors in silicon, http://dx.doi.org/10.48550/arxiv.1107.2701

Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, Engineered valley-orbit splittings in quantum confined nanostructures in silicon, http://dx.doi.org/10.48550/arxiv.1102.5311

Tettamanzi GC; Verduijn J; Lansbergen GP; Blaauboer M; Calderón MJ; Aguado R; Rogge S, 2011, Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor, http://dx.doi.org/10.48550/arxiv.1102.2977

Paul A; Tettamanzi GC; Lee S; Mehrotra S; Colleart N; Biesemans S; Rogge S; Klimeck G, 2011, Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs, http://dx.doi.org/10.48550/arxiv.1102.0140

Tettamanzi GC; Paul A; Lee S; Mehrotra SR; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs, http://dx.doi.org/10.48550/arxiv.1011.2582

Lansbergen GP; Rahman R; Verduijn J; Tettamanzi GC; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2010, Lifetime enhanced transport in silicon due to spin and valley blockade, http://dx.doi.org/10.48550/arxiv.1008.1381

Johnson BC; Tettamanzi GC; Alves ADC; Thompson S; Yang C; Verduijn J; Mol JA; Wacquez R; Vinet M; Sanquer M; Rogge S; Jamieson DN, 2010, Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation, http://dx.doi.org/10.48550/arxiv.1007.5190

Calderon MJ; Verduijn J; Lansbergen GP; Tettamanzi GC; Rogge S; Koiller B, 2010, Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch, http://dx.doi.org/10.48550/arxiv.1005.1237

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