By Scientia Professor Sven Rogge

Book Chapters

Verduijn J; Tettamanzi GC; Roggea S, 2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230, http://dx.doi.org/10.1201/b14792-10

Mol J; Rogge S, 2013, 'Circuits with Single-Atom Devices', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-15

Verduijn J; Tettamanzi G; Rogge S, 2013, 'Orbital Structure and Transport Characteristics of Single Donors', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-10

Mol JA; Rogge S, 2013, 'Circuits with Single-Atom Devices', in Prati E; Shinada T (ed.), Single Atom Nanoelectronics, PAN STANFORD PUBLISHING PTE LTD, pp. 329 - 343, http://dx.doi.org/10.4032/9789814316699

, 2012, 'Dopant Metrology in Advanced FinFETs', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 417 - 443, http://dx.doi.org/10.1201/b13063-16

, 2012, 'New Tools for the Direct Characterisation of FinFETS', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 379 - 416, http://dx.doi.org/10.1201/b13063-15

Tettamanzi GC; Paul A; Lee S; Klimeck G; Rogge S, 2012, 'New tools for the direct characterisation of FinFETS', in Cmos Nanoelectronics Innovative Devices Architectures and Applications, pp. 361

Tettamanzi G, 2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412, http://dx.doi.org/10.4032/9789814364034

Tettamanzi G, 2012, 'New Tools for the Direct Characterisation of FinFETS', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 361 - 398, http://dx.doi.org/10.4032/9789814364034

Journal articles

Berkman IR; Lyasota A; de Boo GG; Bartholomew JG; Lim SQ; Johnson BC; McCallum JC; Xu BB; Xie S; Abrosimov NV; Pohl HJ; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2025, 'Long optical and electron spin coherence times for erbium ions in silicon', Npj Quantum Information, 11, http://dx.doi.org/10.1038/s41534-025-01008-x

Bader J; Lim SQ; Inam FA; Lyasota A; Johnson BC; Peruzzo A; McCallum JC; Li Q; Rogge S; Castelletto S, 2025, 'Photoluminescence Properties of Ion-Implanted Er3+ Defects in 4H-SiCOI for Integrated Quantum Photonics', ACS Applied Nano Materials, 8, pp. 7920 - 7927, http://dx.doi.org/10.1021/acsanm.5c00085

Schofield SR; J Fisher A; Ginossar E; Lyding JW; Silver R; Fei F; Namboodiri P; Wyrick J; Masteghin MG; Cox DC; Murdin BN; Clowes SK; G Keizer J; Y Simmons M; Stemp HG; Morello A; Voisin B; Rogge S; A Wolkow R; Livadaru L; Pitters J; J Z Stock T; J Curson N; Butera RE; V Pavlova T; Jakob AM; Spemann D; Räcke P; Schmidt-Kaler F; Jamieson DN; Pratiush U; Duscher G; V Kalinin S; Kazazis D; Constantinou P; Aeppli G; Ekinci Y; Owen JHG; Fowler E; Moheimani SOR; Randall J; Misra S; A Ivie J; Allemang CR; Anderson EM; Bussmann E; Campbell Q; Gao X; Lu TM; Schmucker SW, 2025, 'Roadmap on atomic-scale semiconductor devices', Nano Futures, 9, http://dx.doi.org/10.1088/2399-1984/ada901

Villegas-Aguilar L; Polino E; Ghafari F; Quintino MT; Laverick KT; Berkman IR; Rogge S; Shalm LK; Tischler N; Cavalcanti EG; Slussarenko S; Pryde GJ, 2024, 'Nonlocality activation in a photonic quantum network', Nature Communications, 15, http://dx.doi.org/10.1038/s41467-024-47354-w

Zhang Y; Guan H; Sheng T; Chen R; Rogge S; Du J; Yin C, 2024, 'Fast Thermodynamic Study on a Silicon Nanotransistor at Cryogenic Temperatures', Nano Letters, 24, pp. 8859 - 8865, http://dx.doi.org/10.1021/acs.nanolett.4c01424

Voisin B; Salfi J; St Médar DD; Johnson BC; McCallum JC; Simmons MY; Rogge S; St Medar DD, 2023, 'A solid-state quantum microscope for wavefunction control of an atom-based quantum dot device in silicon', Nature Electronics, 6, pp. 409 - 416, http://dx.doi.org/10.1038/s41928-023-00979-z

Zhang Y; Fan W; Yang J; Guan H; Zhang Q; Qin X; Duan C; de Boo GG; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2023, 'Photoionisation detection of a single Er3+ ion with sub-100-ns time resolution', National Science Review, 11, http://dx.doi.org/10.1093/nsr/nwad134

Berkman IR; Lyasota A; De Boo GG; Bartholomew JG; Johnson BC; McCallum JC; Xu BB; Xie S; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2023, 'Observing Er3+ Sites in Si with an in Situ Single-Photon Detector', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.014037

Mikhail D; Voisin B; St Medar DD; Buchs G; Rogge S; Rachel S, 2022, 'Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation', Physical Review B, 106, http://dx.doi.org/10.1103/PhysRevB.106.195408

Joch DJ; Slussarenko S; Wang Y; Pepper A; Xie S; Xu BB; Berkman IR; Rogge S; Pryde GJ, 2022, 'Certified random-number generation from quantum steering', Physical Review A, 106, http://dx.doi.org/10.1103/PhysRevA.106.L050401

Rogge S, 2022, 'President’s Column', Australian Physics, 59, pp. 7

Yang J; Wang J; Fan W; Zhang Y; Duan C; Hu G; De Boo GG; Johnson BC; McCallum JC; Rogge S; Yin C; Du J, 2022, 'Spectral Broadening of a Single Er3+ Ion in a Si Nanotransistor', Physical Review Applied, 18, http://dx.doi.org/10.1103/PhysRevApplied.18.034018

Yang J; Fan W; Zhang Y; Duan C; De Boo GG; Ahlefeldt RL; Longdell JJ; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, 'Zeeman and hyperfine interactions of a single Er 3+ 167 ion in Si', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.235306

Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2022, 'Valley population of donor states in highly strained silicon', MATERIALS FOR QUANTUM TECHNOLOGY, 2, http://dx.doi.org/10.1088/2633-4356/ac5d1d

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2022, 'Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054006

Osika EN; Kocsis S; Hsueh YL; Monir S; Chua C; Lam H; Voisin B; Simmons MY; Rogge S; Rahman R, 2022, 'Spin-Photon Coupling for Atomic Qubit Devices in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054007

Tankasala A; Voisin B; Kembrey Z; Salfi J; Hsueh YL; Osika EN; Rogge S; Rahman R, 2022, 'Shallow dopant pairs in silicon: An atomistic full configuration interaction study', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.155158

Hu G; Ahlefeldt RL; De Boo GG; Lyasota A; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Single site optical spectroscopy of coupled Er3+ion pairs in silicon', Quantum Science and Technology, 7, http://dx.doi.org/10.1088/2058-9565/ac56c7

Hu G; De Boo GG; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Erratum: Time-Resolved Photoionization Detection of a Single Er³⁺Ion in Silicon (Nano Letters (2022) 22:1 (396-401) DOI: 10.1021/acs.nanolett.1c04072)', Nano Letters, 22, pp. 1456 - 1456, http://dx.doi.org/10.1021/acs.nanolett.2c00173

Hu G; De Boo GG; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Time-Resolved Photoionization Detection of a Single Er3+Ion in Silicon', Nano Letters, 22, pp. 396 - 401, http://dx.doi.org/10.1021/acs.nanolett.1c04072

Rogge S, 2022, 'From the Executive', Australian Physics, 59, pp. 7

Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2021, 'Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits', Npj Quantum Information, 7, http://dx.doi.org/10.1038/s41534-021-00386-2

Voisin B; Salfi J; Rahman R; Rogge S, 2021, 'Novel characterization of dopant-based qubits', MRS Bulletin, 46, pp. 616 - 622, http://dx.doi.org/10.1557/s43577-021-00136-x

Xu BB; De Boo GG; Johnson BC; Rančić M; Bedoya AC; Morrison B; McCallum JC; Eggleton BJ; Sellars MJ; Yin C; Rogge S, 2021, 'Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators', Physical Review Applied, 15, http://dx.doi.org/10.1103/PhysRevApplied.15.044014

Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2021, 'Isotopic enrichment of silicon by high fluence 28Si- ion implantation', Physical Review Materials, 5, http://dx.doi.org/10.1103/PhysRevMaterials.5.014601

Kobayashi T; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl HJ; Simmons MY; Rogge S, 2021, 'Engineering long spin coherence times of spin–orbit qubits in silicon', Nature Materials, 20, pp. 38 - 42, http://dx.doi.org/10.1038/s41563-020-0743-3

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, 11, http://dx.doi.org/10.1038/s41467-020-19835-1

Rogge S; Schiopu I; Munteanu A, 2020, 'Depth Estimation for Light-Field Images Using Stereo Matching and Convolutional Neural Networks', SENSORS, 20, http://dx.doi.org/10.3390/s20216188

De Boo GG; Yin C; Rančić M; Johnson BC; McCallum JC; Sellars MJ; Rogge S, 2020, 'High-resolution spectroscopy of individual erbium ions in strong magnetic fields', Physical Review B, 102, http://dx.doi.org/10.1103/PhysRevB.102.155309

Ng KSH; Voisin B; Johnson BC; McCallum JC; Salfi J; Rogge S, 2020, 'Scanned Single-Electron Probe inside a Silicon Electronic Device', ACS Nano, 14, pp. 9449 - 9455, http://dx.doi.org/10.1021/acsnano.0c00736

Rogge S, 2020, 'The role of science in the international response to COVID-19 and the imminent cuts to stem education', Australian Physics, 57, pp. 7

Everts JR; King GGG; Lambert NJ; Kocsis S; Rogge S; Longell JJ, 2020, 'Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare-earth ion spins', Physical Review B, 101, http://dx.doi.org/10.1103/PhysRevB.101.214414

Bayat A; Voisin B; Buchs G; Salfi J; Rogge S; Bose S, 2020, 'Certification of spin-based quantum simulators', Physical Review A, 101, http://dx.doi.org/10.1103/PhysRevA.101.052344

Philippopoulos P; Chesi S; Salfi J; Rogge S; Coish WA, 2019, 'Hole spin echo envelope modulations', Physical Review B, 100, http://dx.doi.org/10.1103/PhysRevB.100.125402

Zhang Q; Hu G; De Boo GG; Rančić M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2019, 'Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors', Nano Letters, 19, pp. 5025 - 5030, http://dx.doi.org/10.1021/acs.nanolett.9b01281

Zhang Y; Shi L; Hu D; Chen S; Xie S; Lu Y; Cao Y; Zhu Z; Jin L; Guan BO; Rogge S; Li X, 2019, 'Full-visible multifunctional aluminium metasurfaces by: In situ anisotropic thermoplasmonic laser printing', Nanoscale Horizons, 4, pp. 601 - 609, http://dx.doi.org/10.1039/c9nh00003h

van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Laviéville R; Simmons MY; Rogge S, 2018, 'Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor', Science Advances, 4, http://dx.doi.org/10.1126/sciadv.aat9199

Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, 'Single-Shot Single-Gate rf Spin Readout in Silicon', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.041032

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.031049

Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, 'Gigahertz Single-Electron Pumping Mediated by Parasitic States', Nano Letters, 18, pp. 4141 - 4147, http://dx.doi.org/10.1021/acs.nanolett.8b00874

Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2018, 'Entanglement control and magic angles for acceptor qubits in Si', Applied Physics Letters, 113, http://dx.doi.org/10.1063/1.5036521

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