By Scientia Professor Sven Rogge

Book Chapters

Verduijn J; Tettamanzi GC; Roggea S, 2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230, http://dx.doi.org/10.1201/b14792-10

Mol J; Rogge S, 2013, 'Circuits with Single-Atom Devices', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-15

Verduijn J; Tettamanzi G; Rogge S, 2013, 'Orbital Structure and Transport Characteristics of Single Donors', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-10

Mol JA; Rogge S, 2013, 'Circuits with Single-Atom Devices', in Prati E; Shinada T (ed.), Single Atom Nanoelectronics, PAN STANFORD PUBLISHING PTE LTD, pp. 329 - 343, http://dx.doi.org/10.4032/9789814316699

, 2012, 'Dopant Metrology in Advanced FinFETs', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 417 - 443, http://dx.doi.org/10.1201/b13063-16

, 2012, 'New Tools for the Direct Characterisation of FinFETS', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 379 - 416, http://dx.doi.org/10.1201/b13063-15

Tettamanzi GC; Paul A; Lee S; Klimeck G; Rogge S, 2012, 'New tools for the direct characterisation of FinFETS', in Cmos Nanoelectronics Innovative Devices Architectures and Applications, pp. 361

Tettamanzi G, 2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412, http://dx.doi.org/10.4032/9789814364034

Tettamanzi G, 2012, 'New Tools for the Direct Characterisation of FinFETS', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 361 - 398, http://dx.doi.org/10.4032/9789814364034

Journal articles

Jehl X; Roche B; Sanquer M; Voisin B; Wacquez R; Deshpande V; Previtali B; Vinet M; Verduijn J; Tettamanzi GC; Rogge S; Kotekar-Patil D; Ruoff M; Kern D; Wharam DA; Belli M; Prati E; Fanciulli M, 2011, 'Mass production of silicon MOS-SETs: Can we live with nano-devices' variability?', Procedia Computer Science, 7, pp. 266 - 268, http://dx.doi.org/10.1016/j.procs.2011.09.016

Tettamanzi G; Paul A; Lee SH; Mehrotra S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2011, 'Interface trap density metrology of state-of-the-art undoped Si n-FinFETs', IEEE Electron Device Letters, 32, pp. 440 - 442, http://dx.doi.org/10.1109/LED.2011.2106150

Tettamanzi GC; Lansbergen GP; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2010, 'A novel Kondo effect in single atom transistors', Iconn 2010 Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, pp. 319 - 321, http://dx.doi.org/10.1109/ICONN.2010.6045240

Nguyen HM; Dundar MA; van der Heijden RW; van der Drift EWJM; Salemink HWM; Rogge S; Caro J, 2010, 'Compact mach-zehnder interferometer based on self-collimation of light in a silicon photonic crystal', Optics Infobase Conference Papers

Tung BT; Dao DV; Susumu S; Nguyen HM; Rogge S; Salemink HWM, 2010, 'Strain sensitivity of a modified single-defect photonic crystal nanocavity for mechanical sensing', Proceedings of IEEE Sensors, pp. 2585 - 2588, http://dx.doi.org/10.1109/ICSENS.2010.5690169

Johnson BC; Alves A; Van Donkelaar J; Thompson S; Yang C; Jamieson D; Verduijn A; Mol J; Tettamanzi G; Rogge S; Wacquez R; Vinet M; Dzurak A, 2010, 'Single Dopant Implantation into a Nanoscale MOSFET Devices', ECS Meeting Abstracts, MA2010-02, pp. 1570 - 1570, http://dx.doi.org/10.1149/ma2010-02/23/1570

Mol JA; Beentjes SPC; Rogge S, 2010, 'A low temperature surface preparation method for STM nano-lithography on Si(100)', Applied Surface Science, 256, pp. 5042 - 5045, http://dx.doi.org/10.1016/j.apsusc.2010.03.052

Verduijn J; Tettamanzi G; Lansbergen G; Collaert N; Biesemans S; Rogge S, 2010, 'Coherent transport through a double donor system in silicon', Applied Physics Letters, 96, pp. 072110-1 - 072110-3, http://dx.doi.org/10.1063/1.3318271

Nguyen HM; Dundar MA; Van der heijden RW; Van der drift EWJM; Salemink HWM; Rogge S; Caro J, 2010, 'Compact Mach-Zehnder interferometer based on self-collimation of light in a silicon photonic crystal', Optics Express, 18, pp. 6437 - 6446, http://dx.doi.org/10.1364/OE.18.006437

Johnson BC; Tettamanzi G; Alves A; Thompson S; Yang C; Verduijn J; Mol JA; Wacquez R; Vinet M; Sanquer M; Rogge S; Jamieson DN, 2010, 'Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation', Applied Physics Letters, 96, pp. 264102-1 - 264102-3, http://dx.doi.org/10.1063/1.3458783

Yan Y; Mol JA; Verduijn J; Rogge S; Levine RD; Remacle F, 2010, 'Electrically addressing a molecule-like donor pair in silicon: An atomic scale cyclable full Adder logic', Journal of Physical Chemistry C, 114, pp. 20380 - 20386, http://dx.doi.org/10.1021/jp103524d

Calderon M; Verduijn J; Lansbergen G; Tettamanzi G; Rogge S; Koiller B, 2010, 'Heterointerface effects on the charging energy of the shallow D− ground state in silicon: Role of dielectric mismatch', Physical Review - Section B - Condensed Matter, 82, pp. 075317-1 - 075317-7, http://dx.doi.org/10.1103/PhysRevB.82.075317

Rogge S, 2010, 'Nanoelectronics: Single dopants learn their place', Nature Nanotechnology, 5, pp. 100 - 101, http://dx.doi.org/10.1038/nnano.2010.11

Tettamanzi G; Lansbergen G; Paul A; Lee S; Deosarran P; Collaert N; Biesemans S; Rogge S, 2010, 'Sub-threshold study of undoped trigate nFinFET', Thin Solid Films, 518, pp. 2521 - 2523, http://dx.doi.org/10.1016/j.tsf.2009.10.114

Klein M; Mol JA; Verduijn J; Lansbergen G; Rogge S; Levine RD; Remacle F, 2010, 'Ternary logic implemented on a single dopant atom field effect silicon transistor', Applied Physics Letters, 96, pp. 043107, http://dx.doi.org/10.1063/1.3297906

Tettamanzi G; Paul A; Lansbergen G; Verduijn J; Lee S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Thermionic emission as a tool to study transport in undoped nFinFETs', IEEE Electron Device Letters, 31, pp. 150 - 152, http://dx.doi.org/10.1109/LED.2009.2036134

Lansbergen G; Tettamanzi G; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2010, 'Tunable Kondo effect in a single donor atom', Nano Letters, 10, pp. 455 - 460, http://dx.doi.org/10.1021/nl9031132

Craciun MF; Giovannetti G; Rogge S; Brocks G; Morpurgo AF; van den Brink J, 2009, 'Evidence for the formation of a Mott state in potassium-intercalated pentacene', Physical Review - Section B - Condensed Matter, 79, pp. 125116-1 - 125116-8, http://dx.doi.org/10.1103/PhysRevB.79.125116

Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg L, 2009, 'Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors', Physical Review - Section B - Condensed Matter, 80, pp. 155301-1 - 155301-5, http://dx.doi.org/10.1103/PhysRevB.80.155301

Rahman R; Lansbergen G; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg L, 2009, 'Orbital Stark effect and quantum confinement transition of donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 165314-1 - 165314-10, http://dx.doi.org/10.1103/PhysRevB.80.165314

Klein M; Lansbergen G; Mol JA; Rogge S; Levine RD; Remacle F, 2009, 'Reconfigurable Logic Devices on a Single Dopant Atom—Operation up to a Full Adder by Using Electrical Spectroscopy', Chemphyschem, 10, pp. 162 - 173, http://dx.doi.org/10.1002/cphc.200800568

Lansbergen G; Rahman R; Wellard C; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Atomistic understanding of a single gated dopant atom in a MOSFET', Materials Research Society Symposium Proceedings, 1067, pp. 12 - 17, http://dx.doi.org/10.1557/proc-1067-b03-07

Lansbergen GP; Rahman R; Wellard CJ; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Level spectrum of a single gated arsenic donor in a three terminal geometry', Materials Research Society Symposium Proceedings, 1117, pp. 1 - 6, http://dx.doi.org/10.1557/proc-1117-j01-03

Nguyen MH; Rogge S; Caro J; van der Drift E; Salemink H, 2008, 'Mach-Zehnder interferometer based on collimation effect of photonic crystal', Optics InfoBase Conference Papers

Lansbergen G; Rahman R; Wellard CJ; Woo I; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET', Nature Physics, 4, pp. 656 - 661, http://dx.doi.org/10.1038/nphys994

Caro J; Roeling E; Rong B; Nguyen HM; Van der drift EWJM; Rogge S; Karouta F; Van der heijden RW; Salemink HWM, 2008, 'Transmission measurement of the photonic band gap of GaN photonic crystal slabs', Applied Physics Letters, 93, pp. 051117-1 - 051117-3, http://dx.doi.org/10.1063/1.2967744

Snijders P; Moon E; Gonzalez C; Rogge S; Ortega J; Flores F; Weitering H, 2007, 'Controlled self-organization of atom vacancies in monatomic gallium layers', Physical Review Letters, 99, pp. 116102-1 - 116102-4, http://dx.doi.org/10.1103/PhysRevLett.99.116102

Sellier H; Lansbergen G; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2007, 'Subthreshold channels at the edges of nanoscale triple-gate silicon transistors', Applied Physics Letters, 90, pp. 073502-1 - 073502-3, http://dx.doi.org/10.1063/1.2476343

Klein M; Rogge S; Remacle F; Levine RD, 2007, 'Transcending binary logic by gating three coupled quantum dots', Nano Letters, 7, pp. 2795 - 2799, http://dx.doi.org/10.1021/nl071376e

Lansbergen GP; Sellier H; Collaert N; Ferain I; Jurczak M; Biesemans S; Caro J; Rogge S, 2006, 'Single-dopant spectroscopy and sub-threshold channels at the corners of triple-gate FinFETs', Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology Iconn, pp. 351 - 354, http://dx.doi.org/10.1109/ICONN.2006.340624

Sellier H; Lansbergen GP; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2006, 'Transport spectroscopy of a single dopant in a gated silicon nanowire', Physical Review Letters, 97, http://dx.doi.org/10.1103/PhysRevLett.97.206805

Snijders PC; Rogge S; Weitering HH, 2006, 'Density waves in atomic necklaces', Europhysics News, 37, pp. 27 - 30, http://dx.doi.org/10.1051/epn:2006506

Morpurgo A; Craciun M; Rogge S; Iwasa Y, 2006, 'Alkali-doped Metal-phthalocyanines: Electronic Properties and Structure', ECS Meeting Abstracts, MA2005-01, pp. 922 - 922, http://dx.doi.org/10.1149/ma2005-01/25/922

Craciun MF; Rogge S; den Boer ML; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2006, 'Inside Front Cover: Electronic Transport through Electron‐Doped Metal Phthalocyanine Materials (Adv. Mater. 3/2006)', Advanced Materials, 18, http://dx.doi.org/10.1002/adma.200690014

Snijders P; Rogge S; Weitering H, 2006, 'Competing periodicities in fractionally filled one-dimensional bands', Physical Review Letters, 96, pp. 076801-1 - 076801-4, http://dx.doi.org/10.1103/PhysRevLett.96.076801

Craciun MF; Rogge S; den Boer M-JL; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2006, 'Electronic Transport through Electron-Doped Metal Phthalocyanine Materials', Advanced Materials, 18, pp. 320 - 324, http://dx.doi.org/10.1002/adma.200501268

Margadonna S; Prassides K; Iwasa Y; Taguchi Y; Craciun MF; Rogge S; Morpurgo AF, 2006, 'Potassium Phthalocyanine, KPc: One-Dimensional Molecular Stacks Bridged by K+ Ions', Inorganic Chemistry, 45, pp. 10472 - 10478, http://dx.doi.org/10.1021/ic060727

de Boer R; Stassen A; Craciun MF; Mulder C; Molinari A; Rogge S; Morpurgo AF, 2005, 'Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors', Applied Physics Letters, 86, pp. 262109-1 - 262109-3, http://dx.doi.org/10.1063/1.1984093

Craciun MF; Rogge S; Morpurgo AF, 2005, 'Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped metal-phthalocyanine compounds', Journal of the American Chemical Society, 127, pp. 12210 - 12211, http://dx.doi.org/10.1021/ja054468j

Rogge S; Snijders P; Gonzalez C; Paul S; Ortega J; Flores F; Weitering H, 2005, 'Ga-induced atom wire formation and passivation of stepped Si(112)', Physical Review - Section B - Condensed Matter, 72, pp. 125343-1 - 125343-12, http://dx.doi.org/10.1103/PhysRevB.72.125343

Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics', Physical Review - Section B - Condensed Matter, 69, pp. 035338-1 - 035338-5, http://dx.doi.org/10.1103/PhysRevB.69.035338

Back to profile page