By Scientia Professor Alexander Hamilton

Preprints

Srinivasan A; Yeoh LA; Klochan O; Martin TP; Chen JCH; Micolich AP; Hamilton AR; Reuter D; Wieck AD, 2013, Using a tunable quantum wire to measure the large out-of-plane spin splitting of quasi two-dimensional holes in a GaAs nanostructure, http://dx.doi.org/10.48550/arxiv.1301.7493

Burke AM; Klochan O; Farrer I; Ritchie DA; Hamilton AR; Micolich AP, 2012, Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices, http://dx.doi.org/10.48550/arxiv.1208.4745

Burke AM; Waddington D; Carrad D; Lyttleton R; Tan HH; Reece PJ; Klochan O; Hamilton AR; Rai A; Reuter D; Wieck AD; Micolich AP, 2012, The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures, http://dx.doi.org/10.48550/arxiv.1207.2851

Micolich AP; See AM; Scannell BC; Marlow CA; Martin TP; Pilgrim I; Hamilton AR; Linke H; Taylor RP, 2012, Is it the boundaries or disorder that dominates electron transport in semiconductor `billiards'?, http://dx.doi.org/10.48550/arxiv.1204.4882

Chen JCH; Wang DQ; Klochan O; Micolich AP; Gupta KD; Sfigakis F; Ritchie DA; Reuter D; Wieck AD; Hamilton AR, 2012, Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure, http://dx.doi.org/10.48550/arxiv.1204.0827

See AM; Pilgrim I; Scannell BC; Montgomery RD; Klochan O; Burke AM; Aagesen M; Lindelof PE; Farrer I; Ritchie DA; Taylor RP; Hamilton AR; Micolich AP, 2012, The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots, http://dx.doi.org/10.48550/arxiv.1204.0158

Mak WY; Sfigakis F; Gupta KD; Klochan O; Beere HE; Farrer I; Griffiths JP; Jones GAC; Hamilton AR; Ritchie DA, 2011, Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas, http://dx.doi.org/10.48550/arxiv.1112.5150

Van Beveren LHW; Tan KY; Lai N-S; Klochan O; Dzurak AS; Hamilton AR, 2011, Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime, http://dx.doi.org/10.48550/arxiv.1110.1418

Smith LW; Hamilton AR; Thomas KJ; Pepper M; Farrer I; Griffiths JP; Jones GAC; Ritchie DA, 2011, Compressibility measurements of quasi-one-dimensional quantum wires, http://dx.doi.org/10.48550/arxiv.1108.1268

See AM; Klochan O; Micolich AP; Hamilton AR; Aagesen M; Lindelof PE, 2011, Fabrication of undoped AlGaAs/GaAs electron quantum dots, http://dx.doi.org/10.48550/arxiv.1106.5847

Scannell BC; Pilgrim I; See AM; Montgomery RD; Morse PK; Fairbanks MS; Marlow CA; Linke H; Farrer I; Ritchie DA; Hamilton AR; Micolich AP; Eaves L; Taylor RP, 2011, Probing the Sensitivity of Electron Wave Interference to Disorder-Induced Scattering in Solid-State Devices, http://dx.doi.org/10.48550/arxiv.1106.5823

Kernreiter T; Governale M; Hamilton AR; Zuelicke U, 2011, Charge transport by modulating spin-orbit gauge fields for quasi-onedimensional holes, http://dx.doi.org/10.48550/arxiv.1104.4520

Klochan O; Micolich AP; Hamilton AR; Trunov K; Reuter D; Wieck AD, 2011, Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot, http://dx.doi.org/10.48550/arxiv.1103.0320

Ho LH; Taskinen LJ; Micolich AP; Hamilton AR; Atkinson P; Ritchie DA, 2010, Origin of the hysteresis in bilayer 2D systems in the quantum Hall regime, http://dx.doi.org/10.48550/arxiv.1009.5468

Yeoh LA; Srinivasan A; Martin TP; Klochan O; Micolich AP; Hamilton AR, 2010, Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures, http://dx.doi.org/10.48550/arxiv.1009.2573

Ho LH; Taskinen LJ; Micolich AP; Hamilton AR; Atkinson P; Ritchie DA, 2010, Electrometry using the quantum Hall effect in a bilayer 2D electron system, http://dx.doi.org/10.48550/arxiv.1003.5017

See AM; Klochan O; Hamilton AR; Micolich AP; Aagesen M; Lindelof PE, 2010, AlGaAs/GaAs single electron transistors fabricated without modulation doping, http://dx.doi.org/10.48550/arxiv.1003.0240

Klochan O; Chen JCH; Micolich AP; Hamilton AR; Muraki K; Hirayama Y, 2010, Fabrication and characterization of an induced GaAs single hole transistor, http://dx.doi.org/10.48550/arxiv.1002.2998

Raoux A; Polini M; Asgari R; Hamilton AR; Fazio R; MacDonald AH, 2009, Velocity-modulation control of electron-wave propagation in graphene, http://dx.doi.org/10.48550/arxiv.0912.2608

Chen JCH; Klochan O; Micolich AP; Hamilton AR; Martin TP; Ho LH; Zuelicke U; Reuter D; Wieck AD, 2009, Observation of orientation- and $k$-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures, http://dx.doi.org/10.48550/arxiv.0909.5295

MacLeod SJ; Chan K; Martin TP; Hamilton AR; See A; Micolich AP; Aagesen M; Lindelof PE, 2009, The role of background impurities in the single particle relaxation lifetime of a two-dimensional electron gas, http://dx.doi.org/10.48550/arxiv.0906.4161

Ho LH; Micolich AP; Hamilton AR; Sushkov OP, 2009, Ground-plane screening of Coulomb interactions in two-dimensional systems: How effectively can one two-dimensional system screen interactions in another?, http://dx.doi.org/10.48550/arxiv.0904.3786

Taskinen LJ; Starrett RP; Martin TP; Micolich AP; Hamilton AR; Simmons MY; Ritchie DA; Pepper M, 2008, Radio-frequency reflectometry on large gated 2-dimensional systems, http://dx.doi.org/10.48550/arxiv.0810.5184

Klochan O; Micolich AP; Ho LH; Hamilton AR; Muraki K; Hirayama Y, 2008, Interplay between one-dimensional confinement and crystallographic anisotropy in ballistic hole quantum wires, http://dx.doi.org/10.48550/arxiv.0809.0969

Martin TP; Szorkovszky A; Micolich AP; Hamilton AR; Marlow CA; Linke H; Taylor RP; Samuelson L, 2008, Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts, http://dx.doi.org/10.48550/arxiv.0805.0504

Ho LH; Clarke WR; Micolich AP; Danneau R; Klochan O; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2008, The effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.0804.4049

Ullah AR; Micolich AP; Cochrane JW; Hamilton AR, 2007, The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs, http://dx.doi.org/10.48550/arxiv.0711.1690

Micolich AP; Bell LL; Hamilton AR, 2007, An Improved Process for Fabricating High-Mobility Organic Molecular Crystal Field-Effect Transistors, http://dx.doi.org/10.48550/arxiv.0706.3099

Danneau R; Klochan O; Clarke WR; Ho LH; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2007, 0.7 Structure and Zero Bias Anomaly in Ballistic Hole Quantum Wires, http://dx.doi.org/10.48550/arxiv.cond-mat/0702210

Klochan O; Clarke WR; Danneau R; Micolich AP; Ho LH; Hamilton AR; Muraki K; Hirayama Y, 2006, Ballistic transport in induced one-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0607509

Danneau R; Klochan O; Clarke WR; Ho LH; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA; Zuelicke U, 2006, Anisotropic Zeeman splitting in ballistic one-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0607357

Danneau R; Klochan O; Clarke WR; Ho LH; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA; Zuelicke U, 2006, Zeeman splitting in ballistic hole quantum wires, http://dx.doi.org/10.48550/arxiv.cond-mat/0607355

McCamey DR; Huebl H; Brandt MS; Hutchison WD; McCallum JC; Clark RG; Hamilton AR, 2006, Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures, http://dx.doi.org/10.48550/arxiv.cond-mat/0605516

Micolich AP; Tavenner E; Powell BJ; Hamilton AR; Curry MT; Giedd RE; Meredith P, 2005, Superconductivity in Metal-mixed Ion-Implanted Polymer Films, http://dx.doi.org/10.48550/arxiv.cond-mat/0509278

Danneau R; Clarke WR; Klochan O; Micolich AP; Hamilton AR; Simmons MY; Pepper M; Ritchie DA, 2005, Conductance quantization and the 0.7x2e2/h conductance anomaly in one-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0507592

Buehler TM; Chan V; Ferguson AJ; Dzurak AS; Hudson FE; Reilly DJ; Hamilton AR; Clark RG; Jamieson DN; Yang C; Pakes CI; Prawer S, 2005, Controlled single electron transfer between Si:P dots, http://dx.doi.org/10.48550/arxiv.cond-mat/0506594

McCamey DR; Francis M; McCallum JC; Hamilton AR; Greentree AD; Clark RG, 2004, The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs, http://dx.doi.org/10.48550/arxiv.cond-mat/0411185

Ferguson AJ; Chan VC; Hamilton AR; Clark RG, 2004, Electric field induced charge noise in doped silicon: ionization of phosphorus donors, http://dx.doi.org/10.48550/arxiv.cond-mat/0410663

Buehler TM; Reilly DJ; Starrett RP; Chan VC; Hamilton AR; Dzurak AS; Clark RG, 2004, Observing sub-microsecond telegraph noise with the radio frequency single electron transistor, http://dx.doi.org/10.48550/arxiv.cond-mat/0409568

Clarke WR; Micolich AP; Hamilton AR; Simmons MY; Hanna CB; Rodriguez JR; Pepper M; Ritchie DA, 2004, Evolution of the bilayer nu = 1 quantum Hall state under charge imbalance, http://dx.doi.org/10.48550/arxiv.cond-mat/0403490

Greentree AD; Hamilton AR; Hollenberg LCL; Clark RG, 2004, Electrical readout of a spin qubit without double occupancy, http://dx.doi.org/10.48550/arxiv.cond-mat/0403449

Yasin CE; Sobey TL; Micolich AP; Hamilton AR; Simmons MY; Pfeiffer LN; West KW; Linfield EH; Pepper M; Ritchie DA, 2004, Interaction Correction to the Longitudinal Conductivity and Hall Resistivity in High Quality Two-Dimensional GaAs Electron and Hole Systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0403411

Brenner R; Greentree AD; Hamilton AR, 2003, Current suppression in a double-island single-electron transistor for detection of degenerate charge configurations of a floating double-dot, http://dx.doi.org/10.48550/arxiv.cond-mat/0310478

Greentree AD; Hamilton AR; Green F, 2003, Charge shelving and bias spectroscopy for the readout of a charge-qubit on the basis of superposition states, http://dx.doi.org/10.48550/arxiv.cond-mat/0308302

Dzurak AS; Hollenberg LCL; Jamieson DN; Stanley FE; Yang C; Buhler TM; Chan V; Reilly DJ; Wellard C; Hamilton AR; Pakes CI; Ferguson AG; Gauja E; Prawer S; Milburn GJ; Clark RG, 2003, Charge-based silicon quantum computer architectures using controlled single-ion implantation, http://dx.doi.org/10.48550/arxiv.cond-mat/0306265

Hollenberg LCL; Dzurak AS; Wellard C; Hamilton AR; Reilly DJ; Milburn GJ; Clark RG, 2003, Charge-based quantum computing using single donors in semiconductors, http://dx.doi.org/10.48550/arxiv.cond-mat/0306235

Buehler TM; Reilly DJ; Starrett RP; Greentree AD; Hamilton AR; Dzurak AS; Clark RG, 2003, Single-Shot Readout with the Radio Frequency Single Electron Transistor in the Presence of Charge Noise, http://dx.doi.org/10.48550/arxiv.cond-mat/0304384

Greentree AD; Schirmer SG; Green F; Hollenberg LCL; Hamilton AR; Clark RG, 2003, Maximizing the Hilbert space for a finite number of distinguishable quantum states, http://dx.doi.org/10.48550/arxiv.quant-ph/0304050

Buehler TM; Reilly DJ; Starrett RP; Court NA; Hamilton AR; Dzurak AS; Clark RG, 2003, Development and operation of the twin radio frequency single electron transistor for solid state qubit readout, http://dx.doi.org/10.48550/arxiv.cond-mat/0302085

O'Brien JL; Hamilton AR; Clark RG; Mielke CH; Smith JL; Cooley JC; Rickel DG; Starrett RP; Reilly DJ; Lumpkin NE; Hanrahan, RJ; Hults WL, 2002, Magnetic susceptibility of the normal-superconducting transition in high-purity single-crystal alpha-uranium, http://dx.doi.org/10.48550/arxiv.cond-mat/0208501

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