By Scientia Professor Sven Rogge

Preprints

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, http://dx.doi.org/10.48550/arxiv.1501.05669

Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, Spatially resolved resonant tunneling on single atoms in silicon, http://dx.doi.org/10.48550/arxiv.1501.05042

Fernandez-Gonzalvo X; Chen Y-H; Yin C; Rogge S; Longdell JJ, 2015, Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal, http://dx.doi.org/10.1103/PhysRevA.92.062313

Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2014, Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory, http://dx.doi.org/10.48550/arxiv.1410.1951

Agundez R; Salfi J; Rogge S; Blaauboer M, 2014, Local Kondo temperatures in atomic chains, http://dx.doi.org/10.48550/arxiv.1408.6447

Rossi A; Tanttu T; Tan KY; Iisakka I; Zhao R; Chan KW; Tettamanzi GC; Rogge S; Dzurak AS; Möttönen M, 2014, An accurate single-electron pump based on a highly tunable silicon quantum dot, http://dx.doi.org/10.1021/nl500927q

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, Spatially Resolving Valley Quantum Interference of a Donor in Silicon, http://dx.doi.org/10.48550/arxiv.1403.4648

Tettamanzi GC; Wacquez R; Rogge S, 2014, Charge Pumping Through a Single Donor Atom, http://dx.doi.org/10.1088/1367-2630/16/6/063036

Verduijn J; Vinet M; Rogge S, 2013, Radio-frequency dispersive detection of donor atoms in a field-effect transistor, http://dx.doi.org/10.1063/1.4868423

Yin C; Rancic M; de Boo GG; Stavrias N; McCallum JC; Sellars MJ; Rogge S, 2013, Optical addressing of an individual erbium ion in silicon, http://dx.doi.org/10.48550/arxiv.1304.2117

Mol JA; Salfi J; Miwa JA; Simmons MY; Rogge S, 2013, Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants, http://dx.doi.org/10.48550/arxiv.1303.2712

Agundez RR; Verduijn J; Rogge S; Blaauboer M, 2013, Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system, http://dx.doi.org/10.48550/arxiv.1301.4235

Verduijn J; Agundez RR; Blaauboer M; Rogge S, 2012, Non-local coupling of two donor-bound electrons, http://dx.doi.org/10.48550/arxiv.1209.4726

Zwanenburg FA; Dzurak AS; Morello A; Simmons MY; Hollenberg LCL; Klimeck G; Rogge S; Coppersmith SN; Eriksson MA, 2012, Silicon Quantum Electronics, http://dx.doi.org/10.48550/arxiv.1206.5202

Prati E; De Michielis M; Belli M; Cocco S; Fanciulli M; Kotekar-Patil D; Ruoff M; Kern DP; Wharam DA; Verduijn A; Tettamanzi G; Rogge S; Roche B; Wacquez R; Jehl X; Vinet M; Sanquer M, 2012, Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors, http://dx.doi.org/10.48550/arxiv.1203.4811

Tettamanzi GC; Paul A; Lee S; Klimeck G; Rogge S, 2011, New tools for the direct characterisation of FinFETs, http://dx.doi.org/10.48550/arxiv.1111.5655

Lansbergen GP; Rahman R; Tettamanzi GC; Verduijn J; Hollenberg LCL; Klimeck G; Rogge S, 2011, Dopant metrology in advanced FinFETs, http://dx.doi.org/10.48550/arxiv.1111.4238

Mol JA; van der Heijden J; Verduijn J; Klein M; Remacle F; Rogge S, 2011, Balanced ternary addition using a gated silicon nanowire, http://dx.doi.org/10.48550/arxiv.1108.5527

Rahman R; Lansbergen GP; Verduijn J; Tettamanzi GC; Park SH; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2011, Electric field reduced charging energies and two-electron bound excited states of single donors in silicon, http://dx.doi.org/10.48550/arxiv.1107.2701

Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, Engineered valley-orbit splittings in quantum confined nanostructures in silicon, http://dx.doi.org/10.48550/arxiv.1102.5311

Tettamanzi GC; Verduijn J; Lansbergen GP; Blaauboer M; Calderón MJ; Aguado R; Rogge S, 2011, Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor, http://dx.doi.org/10.48550/arxiv.1102.2977

Paul A; Tettamanzi GC; Lee S; Mehrotra S; Colleart N; Biesemans S; Rogge S; Klimeck G, 2011, Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs, http://dx.doi.org/10.48550/arxiv.1102.0140

Tettamanzi GC; Paul A; Lee S; Mehrotra SR; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs, http://dx.doi.org/10.48550/arxiv.1011.2582

Lansbergen GP; Rahman R; Verduijn J; Tettamanzi GC; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2010, Lifetime enhanced transport in silicon due to spin and valley blockade, http://dx.doi.org/10.48550/arxiv.1008.1381

Johnson BC; Tettamanzi GC; Alves ADC; Thompson S; Yang C; Verduijn J; Mol JA; Wacquez R; Vinet M; Sanquer M; Rogge S; Jamieson DN, 2010, Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation, http://dx.doi.org/10.48550/arxiv.1007.5190

Calderon MJ; Verduijn J; Lansbergen GP; Tettamanzi GC; Rogge S; Koiller B, 2010, Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch, http://dx.doi.org/10.48550/arxiv.1005.1237

Tettamanzi GC; Paul A; Lansbergen GP; Verduijn J; Lee S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, Thermionic Emission as a tool to study transport in undoped nFinFETs, http://dx.doi.org/10.48550/arxiv.1003.5441

Verduijn J; Tettamanzi GC; Lansbergen GP; Collaert N; Biesemans S; Rogge S, 2009, Coherent transport through a double donor system in silicon, http://dx.doi.org/10.48550/arxiv.0912.2196

Lansbergen GP; Tettamanzi GC; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2009, Tunable Kondo effect in a single donor atom, http://dx.doi.org/10.48550/arxiv.0909.5602

Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg LCL, 2009, Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors, http://dx.doi.org/10.48550/arxiv.0905.3200

Rahman R; Lansbergen GP; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg LCL, 2009, Orbital Stark effect and quantum confinement transition of donors in silicon, http://dx.doi.org/10.48550/arxiv.0904.4281

Gasseller M; Loo R; Harrison JF; Caymax M; Rogge S; Tessmer SH, 2009, Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon, http://dx.doi.org/10.48550/arxiv.0904.2617

Craciun MF; Giovannetti G; Rogge S; Brocks G; Morpurgo AF; Brink JVD, 2008, Evidence for the formation of a Mott state in potassium-intercalated pentacene, http://dx.doi.org/10.48550/arxiv.0802.2813

Sellier H; Lansbergen GP; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2006, Transport spectroscopy of a single dopant in a gated silicon nanowire, http://dx.doi.org/10.48550/arxiv.cond-mat/0608159

Sellier H; Lansbergen GP; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2006, Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors, http://dx.doi.org/10.48550/arxiv.cond-mat/0603430

Craciun MF; Rogge S; Morpurgo AF, 2006, Evolution of the conductivity of potassium-doped pentacene films, http://dx.doi.org/10.48550/arxiv.cond-mat/0603261

Craciun MF; Rogge S; Morpurgo AF, 2006, Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped Metal-Phthalocyanine compounds, http://dx.doi.org/10.48550/arxiv.cond-mat/0602329

Snijders PC; Rogge S; Weitering HH, 2005, Competing periodicities in fractionally filled one-dimensional bands, http://dx.doi.org/10.48550/arxiv.cond-mat/0510574

Snijders PC; Gonzalez C; Rogge S; Perez R; Ortega J; Flores F; Weitering HH, 2005, Ga-induced atom wire formation and passivation of stepped Si(112), http://dx.doi.org/10.48550/arxiv.cond-mat/0505343

de Boer RWI; Stassen AF; Craciun MF; Mulder CL; Molinari A; Rogge S; Morpurgo AF, 2005, Ambipolar Cu- and Fe-Phthalocyanine single-crystal field-effect transistors, http://dx.doi.org/10.48550/arxiv.cond-mat/0503282

Gonzalez C; Snijders PC; Ortega J; Perez R; Flores F; Rogge S; Weitering HH, 2004, Formation of atom wires on vicinal silicon, http://dx.doi.org/10.48550/arxiv.cond-mat/0404285

Craciun MF; Rogge S; Boer MJLD; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2004, Electronic transport through electron-doped Metal-Phthalocyanine Materials, http://dx.doi.org/10.48550/arxiv.cond-mat/0401036

Smit GDJ; Rogge S; Caro J; Klapwijk TM, 2003, Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics, http://dx.doi.org/10.48550/arxiv.cond-mat/0309137

Caro J; Vink ID; Smit GDJ; Rogge S; Klapwijk TM, 2003, Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier, http://dx.doi.org/10.48550/arxiv.cond-mat/0309139

Smit GDJ; Rogge S; Caro J; Klapwijk TM, 2003, Gate-induced ionization of single dopant atoms, http://dx.doi.org/10.48550/arxiv.cond-mat/0309134

Smit GDJ; Rogge S; Caro J; Klapwijk TM, 2003, Group theoretical analysis of double acceptors in a magnetic field: identification of the Si:B^+ ground state, http://dx.doi.org/10.48550/arxiv.cond-mat/0309136

Rogge S; Durkut M; Klapwijk TM, 2002, Single domain transport measurements of C60 films, http://dx.doi.org/10.48550/arxiv.cond-mat/0206221

Smit GDJ; Rogge S; Klapwijk TM, 2002, Scaling of nano-Schottky-diodes, http://dx.doi.org/10.48550/arxiv.cond-mat/0202401

Smit GDJ; Rogge S; Klapwijk TM, 2001, Enhanced tunneling across nanometer-scale metal-semiconductor interfaces, http://dx.doi.org/10.48550/arxiv.cond-mat/0110256

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