By Scientia Professor Alexander Hamilton

Preprints

Li R; Hudson FE; Dzurak AS; Hamilton AR, 2015, Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot, http://dx.doi.org/10.48550/arxiv.1509.00553

Scappucci G; Klesse WM; Yeoh LA; Carter DJ; Warschkow O; Marks NA; Jaeger DL; Capellini G; Simmons MY; Hamilton AR, 2015, Bottom-up assembly of metallic germanium, http://dx.doi.org/10.48550/arxiv.1503.05994

Smith LW; Al-Taie H; Lesage AAJ; Sfigakis F; See P; Griffiths JP; Beere HE; Jones GAC; Ritchie DA; Hamilton AR; Kelly MJ; Smith CG, 2015, Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires, http://dx.doi.org/10.48550/arxiv.1503.01490

Lo S-T; Klochan O; Liu C-H; Wang W-H; Hamilton AR; Liang C-T, 2014, Transport in disordered monolayer molybdenum disulfide nanoflakes: evidence for inhomogeneous charge transport, http://dx.doi.org/10.48550/arxiv.1409.0087

See AM; Aagesen M; Lindelof PE; Hamilton AR; Micolich AP, 2014, Using light and heat to controllably switch and reset disorder configuration in nanoscale devices, http://dx.doi.org/10.48550/arxiv.1408.4845

Klochan O; Hamilton AR; Gupta KD; Sfigakis F; Beere HE; Ritchie DA, 2014, Landau level spin diode in a GaAs two dimensional hole system, http://dx.doi.org/10.48550/arxiv.1406.3883

MacLeod SJ; See AM; Keane ZK; Scriven P; Micolich AP; Aagesen M; Lindelof PE; Hamilton AR, 2013, Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor, http://dx.doi.org/10.48550/arxiv.1312.5410

Carrad DJ; Burke AM; Klochan O; See AM; Hamilton AR; Rai A; Reuter D; Wieck AD; Micolich AP, 2013, Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot, http://dx.doi.org/10.48550/arxiv.1312.1754

See AM; Klochan O; Micolich AP; Aagesen M; Lindelof PE; Hamilton AR, 2013, A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor, http://dx.doi.org/10.48550/arxiv.1310.4889

Klochan O; Micolich AP; Hamilton AR; Reuter D; Wieck AD; Reininghaus F; Pletyukhov M; Schoeller H, 2013, Scaling of the Kondo zero bias peak in a hole quantum dot at finite temperatures, http://dx.doi.org/10.48550/arxiv.1305.1381

Li R; Hudson FE; Dzurak AS; Hamilton AR, 2013, Single Hole Transport in a Silicon Metal-Oxide-Semiconductor Quantum Dot, http://dx.doi.org/10.48550/arxiv.1304.2871

Srinivasan A; Yeoh LA; Klochan O; Martin TP; Chen JCH; Micolich AP; Hamilton AR; Reuter D; Wieck AD, 2013, Using a tunable quantum wire to measure the large out-of-plane spin splitting of quasi two-dimensional holes in a GaAs nanostructure, http://dx.doi.org/10.48550/arxiv.1301.7493

Burke AM; Klochan O; Farrer I; Ritchie DA; Hamilton AR; Micolich AP, 2012, Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices, http://dx.doi.org/10.48550/arxiv.1208.4745

Burke AM; Waddington D; Carrad D; Lyttleton R; Tan HH; Reece PJ; Klochan O; Hamilton AR; Rai A; Reuter D; Wieck AD; Micolich AP, 2012, The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures, http://dx.doi.org/10.48550/arxiv.1207.2851

Micolich AP; See AM; Scannell BC; Marlow CA; Martin TP; Pilgrim I; Hamilton AR; Linke H; Taylor RP, 2012, Is it the boundaries or disorder that dominates electron transport in semiconductor `billiards'?, http://dx.doi.org/10.48550/arxiv.1204.4882

Chen JCH; Wang DQ; Klochan O; Micolich AP; Gupta KD; Sfigakis F; Ritchie DA; Reuter D; Wieck AD; Hamilton AR, 2012, Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure, http://dx.doi.org/10.48550/arxiv.1204.0827

See AM; Pilgrim I; Scannell BC; Montgomery RD; Klochan O; Burke AM; Aagesen M; Lindelof PE; Farrer I; Ritchie DA; Taylor RP; Hamilton AR; Micolich AP, 2012, The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots, http://dx.doi.org/10.48550/arxiv.1204.0158

Mak WY; Sfigakis F; Gupta KD; Klochan O; Beere HE; Farrer I; Griffiths JP; Jones GAC; Hamilton AR; Ritchie DA, 2011, Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas, http://dx.doi.org/10.48550/arxiv.1112.5150

Van Beveren LHW; Tan KY; Lai N-S; Klochan O; Dzurak AS; Hamilton AR, 2011, Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime, http://dx.doi.org/10.48550/arxiv.1110.1418

Smith LW; Hamilton AR; Thomas KJ; Pepper M; Farrer I; Griffiths JP; Jones GAC; Ritchie DA, 2011, Compressibility measurements of quasi-one-dimensional quantum wires, http://dx.doi.org/10.48550/arxiv.1108.1268

See AM; Klochan O; Micolich AP; Hamilton AR; Aagesen M; Lindelof PE, 2011, Fabrication of undoped AlGaAs/GaAs electron quantum dots, http://dx.doi.org/10.48550/arxiv.1106.5847

Scannell BC; Pilgrim I; See AM; Montgomery RD; Morse PK; Fairbanks MS; Marlow CA; Linke H; Farrer I; Ritchie DA; Hamilton AR; Micolich AP; Eaves L; Taylor RP, 2011, Probing the Sensitivity of Electron Wave Interference to Disorder-Induced Scattering in Solid-State Devices, http://dx.doi.org/10.48550/arxiv.1106.5823

Kernreiter T; Governale M; Hamilton AR; Zuelicke U, 2011, Charge transport by modulating spin-orbit gauge fields for quasi-onedimensional holes, http://dx.doi.org/10.48550/arxiv.1104.4520

Klochan O; Micolich AP; Hamilton AR; Trunov K; Reuter D; Wieck AD, 2011, Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot, http://dx.doi.org/10.48550/arxiv.1103.0320

Ho LH; Taskinen LJ; Micolich AP; Hamilton AR; Atkinson P; Ritchie DA, 2010, Origin of the hysteresis in bilayer 2D systems in the quantum Hall regime, http://dx.doi.org/10.48550/arxiv.1009.5468

Yeoh LA; Srinivasan A; Martin TP; Klochan O; Micolich AP; Hamilton AR, 2010, Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures, http://dx.doi.org/10.48550/arxiv.1009.2573

Ho LH; Taskinen LJ; Micolich AP; Hamilton AR; Atkinson P; Ritchie DA, 2010, Electrometry using the quantum Hall effect in a bilayer 2D electron system, http://dx.doi.org/10.48550/arxiv.1003.5017

See AM; Klochan O; Hamilton AR; Micolich AP; Aagesen M; Lindelof PE, 2010, AlGaAs/GaAs single electron transistors fabricated without modulation doping, http://dx.doi.org/10.48550/arxiv.1003.0240

Klochan O; Chen JCH; Micolich AP; Hamilton AR; Muraki K; Hirayama Y, 2010, Fabrication and characterization of an induced GaAs single hole transistor, http://dx.doi.org/10.48550/arxiv.1002.2998

Raoux A; Polini M; Asgari R; Hamilton AR; Fazio R; MacDonald AH, 2009, Velocity-modulation control of electron-wave propagation in graphene, http://dx.doi.org/10.48550/arxiv.0912.2608

Chen JCH; Klochan O; Micolich AP; Hamilton AR; Martin TP; Ho LH; Zuelicke U; Reuter D; Wieck AD, 2009, Observation of orientation- and $k$-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures, http://dx.doi.org/10.48550/arxiv.0909.5295

MacLeod SJ; Chan K; Martin TP; Hamilton AR; See A; Micolich AP; Aagesen M; Lindelof PE, 2009, The role of background impurities in the single particle relaxation lifetime of a two-dimensional electron gas, http://dx.doi.org/10.48550/arxiv.0906.4161

Ho LH; Micolich AP; Hamilton AR; Sushkov OP, 2009, Ground-plane screening of Coulomb interactions in two-dimensional systems: How effectively can one two-dimensional system screen interactions in another?, http://dx.doi.org/10.48550/arxiv.0904.3786

Taskinen LJ; Starrett RP; Martin TP; Micolich AP; Hamilton AR; Simmons MY; Ritchie DA; Pepper M, 2008, Radio-frequency reflectometry on large gated 2-dimensional systems, http://dx.doi.org/10.48550/arxiv.0810.5184

Klochan O; Micolich AP; Ho LH; Hamilton AR; Muraki K; Hirayama Y, 2008, Interplay between one-dimensional confinement and crystallographic anisotropy in ballistic hole quantum wires, http://dx.doi.org/10.48550/arxiv.0809.0969

Martin TP; Szorkovszky A; Micolich AP; Hamilton AR; Marlow CA; Linke H; Taylor RP; Samuelson L, 2008, Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts, http://dx.doi.org/10.48550/arxiv.0805.0504

Ho LH; Clarke WR; Micolich AP; Danneau R; Klochan O; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2008, The effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.0804.4049

Danneau R; Klochan O; Clarke WR; Ho LH; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2007, 0.7 Structure and Zero Bias Anomaly in Ballistic Hole Quantum Wires, http://dx.doi.org/10.48550/arxiv.cond-mat/0702210

Klochan O; Clarke WR; Danneau R; Micolich AP; Ho LH; Hamilton AR; Muraki K; Hirayama Y, 2006, Ballistic transport in induced one-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0607509

Danneau R; Klochan O; Clarke WR; Ho LH; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA; Zuelicke U, 2006, Anisotropic Zeeman splitting in ballistic one-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0607357

Danneau R; Klochan O; Clarke WR; Ho LH; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA; Zuelicke U, 2006, Zeeman splitting in ballistic hole quantum wires, http://dx.doi.org/10.48550/arxiv.cond-mat/0607355

McCamey DR; Huebl H; Brandt MS; Hutchison WD; McCallum JC; Clark RG; Hamilton AR, 2006, Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures, http://dx.doi.org/10.48550/arxiv.cond-mat/0605516

Micolich AP; Tavenner E; Powell BJ; Hamilton AR; Curry MT; Giedd RE; Meredith P, 2005, Superconductivity in Metal-mixed Ion-Implanted Polymer Films, http://dx.doi.org/10.48550/arxiv.cond-mat/0509278

Danneau R; Clarke WR; Klochan O; Micolich AP; Hamilton AR; Simmons MY; Pepper M; Ritchie DA, 2005, Conductance quantization and the 0.7x2e2/h conductance anomaly in one-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0507592

Buehler TM; Chan V; Ferguson AJ; Dzurak AS; Hudson FE; Reilly DJ; Hamilton AR; Clark RG; Jamieson DN; Yang C; Pakes CI; Prawer S, 2005, Controlled single electron transfer between Si:P dots, http://dx.doi.org/10.48550/arxiv.cond-mat/0506594

McCamey DR; Francis M; McCallum JC; Hamilton AR; Greentree AD; Clark RG, 2004, The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs, http://dx.doi.org/10.48550/arxiv.cond-mat/0411185

Ferguson AJ; Chan VC; Hamilton AR; Clark RG, 2004, Electric field induced charge noise in doped silicon: ionization of phosphorus donors, http://dx.doi.org/10.48550/arxiv.cond-mat/0410663

Buehler TM; Reilly DJ; Starrett RP; Chan VC; Hamilton AR; Dzurak AS; Clark RG, 2004, Observing sub-microsecond telegraph noise with the radio frequency single electron transistor, http://dx.doi.org/10.48550/arxiv.cond-mat/0409568

Clarke WR; Micolich AP; Hamilton AR; Simmons MY; Hanna CB; Rodriguez JR; Pepper M; Ritchie DA, 2004, Evolution of the bilayer nu = 1 quantum Hall state under charge imbalance, http://dx.doi.org/10.48550/arxiv.cond-mat/0403490

Greentree AD; Hamilton AR; Hollenberg LCL; Clark RG, 2004, Electrical readout of a spin qubit without double occupancy, http://dx.doi.org/10.48550/arxiv.cond-mat/0403449

Back to profile page