By Professor Ewa Magdalena Goldys

Conference Papers

Bhatta H; Goldys EM; Ma J, 2006, 'Fluorescence and fluorescence-lifetime imaging microscopy (FLIM) to characterize yeast strains by autofluorescence', in Progress in Biomedical Optics and Imaging Proceedings of SPIE, http://dx.doi.org/10.1117/12.645354

Ramelan AH; Yahya I; Prasodjo ; Goldys EM, 2006, 'GaSb/AlGaSb compound semiconductors grown by MOCVD for optoelectronic applications', in Journal of Nonlinear Optical Physics and Materials, pp. 323 - 329, http://dx.doi.org/10.1142/S0218863506003335

Orr BJ; Dawes JM; Coutts DW; Goldys EM; He Y; Mildren R; Pask HM; Piper JA; Town GE; Withford MJ, 2005, 'Centre for lasers and applications', in Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS, pp. 3 - 4, http://dx.doi.org/10.1109/LEOS.2005.1547847

Drozdowicz-Tomsia K; Goldys EM; Motlan , 2005, 'Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures', in Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings COMMAD, pp. 5 - 8, http://dx.doi.org/10.1109/COMMAD.2004.1577478

Godlewski M; Ivanov VY; Łusakowska E; Boźek R; Masojedovas S; Juršénas S; Kazlauskas K; Žukauskas A; Goldys EM; Phillips MR; Böttcher T; Figge S; Hommel D, 2005, 'Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures', in Physica Status Solidi C Conferences, pp. 1056 - 1059, http://dx.doi.org/10.1002/pssc.200460619

Barnett A; Goldys EM; Dybek K, 2005, 'Detection limit improvement of surface plasmon resonance based biosensors using statistical hypothesis testing', in Progress in Biomedical Optics and Imaging Proceedings of SPIE, pp. 71 - 78, http://dx.doi.org/10.1117/12.590218

Bhatta H; Goldys EM; Learmonth R, 2005, 'Rapid identification of microorganisms by intrinsic fluorescence', in Progress in Biomedical Optics and Imaging Proceedings of SPIE, pp. 9 - 18, http://dx.doi.org/10.1117/12.588851

Paskova T; Arnaudov B; Paskov PP; Goldys EM; Hautakangas S; Saarinen K; Södervall U; Monemar B, 2005, 'Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN', in Aip Conference Proceedings, pp. 261 - 262, http://dx.doi.org/10.1063/1.1994092

Tomaszewska-Grzeda A; Lojkowski W; Godlewski M; Yatsunenko S; Drozdowicz-Tomsia K; Goldys EM; Phillips MR, 2005, 'Growth and characterization of ZnO nanoparticles', in ACTA PHYSICA POLONICA A, POLISH ACAD SCIENCES INST PHYSICS, POLAND, Jaszowiec, pp. 897 - 902, presented at 34th International School on the Physics of Semiconducting Compounds, POLAND, Jaszowiec, 04 June 2005 - 10 June 2005, http://dx.doi.org/10.12693/APhysPolA.108.897

Godlewski M; Yatsunenko S; Drozdowicz-Tomsia K; Goldys EM; Phillips MR; Klar PJ; Heimbrodt W, 2005, 'Dynamics of light emission in CdMnS nanoparticles', in ACTA PHYSICA POLONICA A, POLISH ACAD SCIENCES INST PHYSICS, POLAND, Jaszowiec, pp. 681 - 688, presented at 34th International School on the Physics of Semiconducting Compounds, POLAND, Jaszowiec, 04 June 2005 - 10 June 2005, http://dx.doi.org/10.12693/APhysPolA.108.681

Godlewski M; Yatsunenko S; Drozdowicz-Tomsia K; Goldys EM; Phillips MR; Klar PJ; Heimbrodt W, 2005, 'Dynamics of light emission in CdMnS nanoparticles', in Acta Physica Polonica A, pp. 681 - 688, http://dx.doi.org/10.12693/aphyspola.108.681

Tomaszewska-Grzȩda A; Lojkowski W; Godlewski M; Yatsunenko S; Drozdowicz-Tomsia K; Goldys EM; Phillips MR, 2005, 'Growth and characterization of ZnO nanoparticles', in Acta Physica Polonica A, pp. 897 - 902, http://dx.doi.org/10.12693/aphyspola.108.897

Godlewski M; Yatsunenko S; Ivanov VYU; Khachapuridze A; Świa̧tek K; Goldys EM; Phillips MR; Klar PJ; Heimbrodt W, 2005, 'Origin of ultrafast component of photoluminescence decay in nanostructures doped with transition metal or rare-earth ions', in Acta Physica Polonica A, pp. 65 - 74, http://dx.doi.org/10.12693/APhysPolA.107.65

Phillips MR; Gelhausen O; Goldys EM, 2004, 'Cathodoluminescence properties of zinc oxide nanoparticles', in Physica Status Solidi C Conferences, pp. 229 - 234, http://dx.doi.org/10.1002/pssc.200303926

Godlewski M; Szmidt J; Olszyna A; Werbowy A; Łusakowska E; Phillips MR; Goldys EM; Sokolowska A, 2004, 'Luminescent properties of wide bandgap materials at room temperature', in Physica Status Solidi C Conferences, pp. 213 - 218, http://dx.doi.org/10.1002/pssc.200303935

Godlewski M; Łusakowska E; Bozek R; Goldys EM; Phillips MR; Böttcher T; Figge S; Hommel D, 2004, 'Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers', in Physica Status Solidi A Applied Research, pp. 212 - 215, http://dx.doi.org/10.1002/pssa.200303903

Phillips MR; Gelhausen O; Goldys EM, 2004, 'Cathodoluminescence properties of zinc oxide nanoparticiles', in Physica Status Solidi A Applied Research, pp. 229 - 234, http://dx.doi.org/10.1002/pssa.200303977

Godlewski M; Przybylińska H; Bozek R; Goldys EM; Bergman JP; Monemar B; Grzegory I; Porowski S, 2004, 'Compensation mechanisms in magnesium doped GaN', in Physica Status Solidi A Applied Research, pp. 216 - 220, http://dx.doi.org/10.1002/pssa.200303904

Godlewski M; Wojtowicz T; Goldys EM; Phillips MR; Czernecki R; Prystawko P; Leszczynski M; Perlin P; Grzegory I; Porowski S; Böttcher T; Figge S; Hommel D, 2004, 'In-depth and in-plane profiling of light emission properties from semiconductor-based heterostructures', in Opto Electronics Review, pp. 353 - 359

Godlewski M; Goldys EM; Phillips MR; Böttcher T; Figge S; Hommel D; Czernecki R; Prystawko P; Leszczynski M; Perlin P; Grzegory I; Porowski S, 2004, 'In-depth and in-plane profiling of light emission properties of InGaN-based laser diode', in Physica Status Solidi A Applied Research, pp. 207 - 211, http://dx.doi.org/10.1002/pssa.200303902

Godlewski M; Guziewicz E; Kopalko K; Łusakowska E; Dynowska E; Godlewski MM; Goldys EM; Phillips MR, 2003, 'Origin of white color light emission in ALE-grown ZnSe', in Journal of Luminescence, pp. 455 - 459, http://dx.doi.org/10.1016/S0022-2313(02)00597-5

Godlewski M; Ivanov VY; Goldys EM; Phillips M; Böttcher T; Figge S; Hommel D; Czernecki R; Prystawko P; Leszczynski M; Perlin P; Grzegory I; Porowski S, 2003, 'Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission', in Acta Physica Polonica A, pp. 689 - 694, http://dx.doi.org/10.12693/APhysPolA.103.689

Gelhausen O; Phillips MR; Goldys EM; Paskova T; Monemar B; Strassburg M; Hoffmann A, 2003, 'Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN', in Materials Research Society Symposium Proceedings, pp. 497 - 502, http://dx.doi.org/10.1557/proc-798-y5.20

Gelhausen O; Malguth E; Phillips MR; Goldys EM; Strassburg M; Hoffmann A; Graf T; Gjukic M; Stutzmann M, 2003, 'Optical properties of Mn-doped GaN', in Materials Research Society Symposium Proceedings, pp. 569 - 574, http://dx.doi.org/10.1557/proc-798-y8.5

Yatsunenko S; Khachapuridze A; Ivanov VY; Godlewski M; Van Khoi L; Gołacki Z; Karczewski G; Goldys EM; Phillips M; Klar PJ; Heimbrodt W, 2003, 'Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction', in Acta Physica Polonica A, pp. 643 - 648, http://dx.doi.org/10.12693/APhysPolA.103.643

Butcher KSA; Afifuddin ; Chen PPT; Godlewski M; Szczerbakow A; Goldys EM; Tansley TL; Freitas JA, 2002, 'Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers', in Journal of Crystal Growth, pp. 237 - 243, http://dx.doi.org/10.1016/S0022-0248(02)01747-5

Paskova T; Paskov PP; Darakchieva V; Goldys EM; Södervall U; Valcheva E; Arnaudov B; Monemar B, 2002, 'Free-standing HVPE-GaN quasi-substrates: Impurity and strain distributions', in Physica Status Solidi C Conferences, pp. 209 - 213, http://dx.doi.org/10.1002/pssc.200390025

Butcher KSA; Dou H; Goldys EM; Tansley TL; Srikeaw S, 2002, 'Ultraviolet Raman and optical transmission studies of RF sputtered indium nitride', in Physica Status Solidi C Conferences, pp. 373 - 376, http://dx.doi.org/10.1002/pssc.200390066

Godlewski M; Szczerbakow A; Kopalko K; Lusakowska E; Butcher KSA; Goldys EM; Tansley TL; Barski A, 2002, 'Atomic layer epitaxy of ZnO for substrates for GaN epitaxy', in Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings COMMAD, pp. 13 - 16, http://dx.doi.org/10.1109/COMMAD.2002.1237178

Gelhausen O; Phillips MR; Klein HN; Goldys EM, 2002, 'Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN', in Materials Research Society Symposium Proceedings, pp. 653 - 658, http://dx.doi.org/10.1557/proc-744-m10.7

Motlan ; Goldys EM; Dao LV, 2002, 'Photoluminescence of GaSb self-assembled quantum dot layers grown by metalorganic chemical vapor deposition', in Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures, pp. 291 - 294, http://dx.doi.org/10.1116/1.1445167

Godlewski M; Goldys EM; Phillips M; Böttcher T; Flgge S; Hommel D; Czernecki R; Prystawko P; Leszczynski M; Perlin P; Wisniewski P; Suski T; Bockowski M; Grzegory I; Porowski S, 2002, 'Relationship between sample morphology and carrier diffusion length in gan thin films', in Acta Physica Polonica A, pp. 627 - 632, http://dx.doi.org/10.12693/APhysPolA.102.627

Ramelan AH; Butcher KSA; Goldys EM, 2002, 'X-ray photoelectron spectroscopy of AlxGa1-xSb grown by metalorganic chemical vapour deposition', in Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings COMMAD, pp. 149 - 152, http://dx.doi.org/10.1109/COMMAD.2002.1237214

Motlan ; Goldys EM, 2001, 'MOCVD GaSb/GaAs quantum dots', in Materials Research Society Symposium Proceedings, pp. J3.35.5

Goldys EM; Godlewski M; Phillips MR; Toropov AA, 2001, 'Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum wells', in Materials Research Society Symposium Proceedings, pp. G6.12.5

Godlewski M; Goldys EM; Butcher KSA; Phillips MR; Pakula K; Baranowski JM, 2001, 'Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures', in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, WILEY-V C H VERLAG GMBH, COLORADO, DENVER, pp. 179 - 182, presented at 4th International Conference on Nitride Semiconductors (ICNS-4), COLORADO, DENVER, 16 July 2001 - 20 July 2001, http://dx.doi.org/10.1002/1521-3951(200111)228:1<179::AID-PSSB179>3.3.CO;2-V

Merinov B; Bourenkov G; Bismayer U, 2001, 'Spatial fluctuations and localisation effects in optical characteristics of p-Doped GaN films', in Physica Status Solidi B Basic Research, pp. 365 - 369, http://dx.doi.org/10.1002/1521-3951(200004)218

Goldys EM; Paskova T; Sheely J; Schaff W; Eastman LF, 2000, 'Cathodoluminescence study of nitride transistor structures - Characterisation of native oxide', in Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings COMMAD, pp. 133 - 136, http://dx.doi.org/10.1109/COMMAD.2000.1022909

Goldys EM; Godlewski M; Kaminski E; Piotrowska A; Koley G; Spencer MG; Eastman LF, 2000, 'Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN', in Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings COMMAD, pp. 539 - 542, http://dx.doi.org/10.1109/COMMAD.2000.1023006

Ramelan AH; Butcher KSA; Goldys EM; Tansley TL; Tomsia K, 2000, 'Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes', in Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings COMMAD, pp. 125 - 128, http://dx.doi.org/10.1109/COMMAD.2000.1022907

Butcher KSA; Afifuddin ; Chen PPT; Godlewski M; Szczerbakow A; Goldys EM; Tansley TL; Freitas JA, 2000, 'Glass substrates for GaN using ZnO buffer layers', in Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings COMMAD, pp. 535 - 538, http://dx.doi.org/10.1109/COMMAD.2000.1023005

Afifuddin A; Butcher KSA; Chen PPT; Goldys EM; Tansley TL, 2000, 'Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition', in Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings COMMAD, pp. 129 - 132, http://dx.doi.org/10.1109/COMMAD.2000.1022908

Guy IL; Goldys EM; Muensit S, 2000, 'Measurements of piezoelectric coefficients of nitride semiconductor films', in IEEE Semiconducting and Semi Insulating Materials Conference SIMC, pp. 55 - 58, http://dx.doi.org/10.1109/SIM.2000.939197

Buyanova IA; Chen WM; Pozina G; Hai PN; Thinh NQ; Goldys EM; Xin HP; Tu CW, 2000, 'Optical and electronic properties of GaNAs/GaAs structures', in Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings COMMAD, pp. 483 - 490, http://dx.doi.org/10.1109/COMMAD.2000.1022995

Motlan ; Goldys EM; Butcher KSA; Tansley TL, 2000, 'Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD', in Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings COMMAD, pp. 419 - 422, http://dx.doi.org/10.1109/COMMAD.2000.1022979

Godlewski M; Goldys EM; Phillips MR; Ivanov VY; Langer R; Barski A, 2000, 'Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum well structures', in IEEE Semiconducting and Semi Insulating Materials Conference SIMC, pp. 31 - 34, http://dx.doi.org/10.1109/SIM.2000.939192

Ramelan AH; Drozdowicz-Tomsia K; Goldys EM; Tansley TL, 2000, 'Study of optical and electrical properties of GaSb/AlxGa1-xSb grown by MOCVD', in IEEE Semiconducting and Semi Insulating Materials Conference SIMC, pp. 209 - 212, http://dx.doi.org/10.1109/SIM.2000.939228

Motlan M; Goldys EM; Tansley TL, 2000, 'The effect of growth temperature on the structure of GaSb/GaAs quantum dots grown by MOCVD', in IEEE Semiconducting and Semi Insulating Materials Conference SIMC, pp. 236 - 239, http://dx.doi.org/10.1109/SIM.2000.939234

Kaminska E; Piotrowska A; Barcz A; Jasinski J; Zielinski M; Golaszewska K; Davis RF; Goldys E; Tomsia K, 2000, 'Zirconium mediated hydrogen outdiffusion from p-GaN', in MRS Internet Journal of Nitride Semiconductor Research, http://dx.doi.org/10.1557/s1092578300004774

Kaminska E; Piotrowska A; Barcz A; Jasinski J; Zielinski M; Golaszewska K; Davis RF; Goldys E; Tomsia K, 2000, 'Zirconium mediated hydrogen outdiffusion from p-GaN', in Materials Research Society Symposium Proceedings, pp. W10.9.6

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