By Professor Bram Hoex

Preprints

Madumelu C; Cai Y; Hollemann C; Peibst R; Hoex B; Hallam B; Soeriyadi A, Assessing the Stability of P+ and N+ Polysilicon Passivating Contacts with Various Capping Layers on P-Type Wafers, http://dx.doi.org/10.2139/ssrn.4289694

Sen C; Wang H; Wu X; Khan MU; Chan C; Abbott M; Hoex B, Four Failure Modes in Silicon Heterojunction Glass-Backsheet Modules, http://dx.doi.org/10.2139/ssrn.4293027

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