By Dr Sam Keith Gorman

Journal articles

Geng H; Kiczynski M; Timofeev AV; Osika EN; Keith D; Rowlands J; Kranz L; Rahman R; Chung Y; Keizer JG; Gorman SK; Simmons MY, 2025, 'High-fidelity sub-microsecond single-shot electron spin readout above 3.5 K', Nature Communications, 16, http://dx.doi.org/10.1038/s41467-025-58279-3

Donnelly MB; Rowlands J; Kranz L; Hsueh YL; Chung Y; Timofeev AV; Geng H; Singh-Gregory P; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2025, 'Noise correlations in an atom-based quantum dot array', PHYSICAL REVIEW APPLIED, 23, http://dx.doi.org/10.1103/kr2l-c97c

Thorvaldson I; Poulos D; Moehle CM; Misha SH; Edlbauer H; Reiner J; Geng H; Voisin B; Jones MT; Donnelly MB; Peña LF; Hill CD; Myers CR; Keizer JG; Chung Y; Gorman SK; Kranz L; Simmons MY, 2025, 'Grover’s algorithm in a four-qubit silicon processor above the fault-tolerant threshold', Nature Nanotechnology, 20, pp. 472 - 477, http://dx.doi.org/10.1038/s41565-024-01853-5

Hsueh YL; Keith D; Chung Y; Gorman SK; Kranz L; Monir S; Kembrey Z; Keizer JG; Rahman R; Simmons MY, 2024, 'Engineering Spin-Orbit Interactions in Silicon Qubits at the Atomic-Scale', Advanced Materials, 36, http://dx.doi.org/10.1002/adma.202312736

Reiner J; Chung Y; Misha SH; Lehner C; Moehle C; Poulos D; Monir S; Charde KJ; Macha P; Kranz L; Thorvaldson I; Thorgrimsson B; Keith D; Hsueh YL; Rahman R; Gorman SK; Keizer JG; Simmons MY, 2024, 'High-fidelity initialization and control of electron and nuclear spins in a four-qubit register', Nature Nanotechnology, 19, pp. 605 - 611, http://dx.doi.org/10.1038/s41565-023-01596-9

Gorman SK; Simmons MY, 2024, 'High-fidelity initialization and control of multiple nuclear spin qubits in silicon', Nature Nanotechnology, 19, pp. 584 - 585, http://dx.doi.org/10.1038/s41565-024-01603-7

Monir S; Osika EN; Gorman SK; Thorvaldson I; Hsueh YL; Macha P; Kranz L; Reiner J; Simmons MY; Rahman R, 2024, 'Impact of measurement backaction on nuclear spin qubits in silicon', Physical Review B, 109, http://dx.doi.org/10.1103/PhysRevB.109.035157

Tranter AD; Kranz L; Sutherland S; Keizer JG; Gorman SK; Buchler BC; Simmons MY, 2024, 'Machine Learning-Assisted Precision Manufacturing of Atom Qubits in Silicon', ACS Nano, http://dx.doi.org/10.1021/acsnano.4c00080

Jones MT; Monir MS; Krauth FN; Macha P; Hsueh YL; Worrall A; Keizer JG; Kranz L; Gorman SK; Chung Y; Rahman R; Simmons MY, 2023, 'Atomic Engineering of Molecular Qubits for High-Speed, High-Fidelity Single Qubit Gates', ACS Nano, 17, pp. 22601 - 22610, http://dx.doi.org/10.1021/acsnano.3c06668

Hsueh YL; Kranz L; Keith D; Monir S; Chung Y; Gorman SK; Rahman R; Simmons MY, 2023, 'Hyperfine-mediated spin relaxation in donor-atom qubits in silicon', Physical Review Research, 5, http://dx.doi.org/10.1103/PhysRevResearch.5.023043

Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2023, 'The Use of Exchange Coupled Atom Qubits as Atomic-Scale Magnetic Field Sensors', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202201625

Kranz L; Roche S; Gorman SK; Keizer JG; Simmons MY, 2023, 'High-Fidelity CNOT Gate for Donor Electron Spin Qubits in Silicon', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.024068

Hogg MR; Pakkiam P; Gorman SK; Timofeev AV; Chung Y; Gulati GK; House MG; Simmons MY, 2023, 'Single-Shot Readout of Multiple Donor Electron Spins with a Gate-Based Sensor', Prx Quantum, 4, http://dx.doi.org/10.1103/PRXQuantum.4.010319

Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2023, 'The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors (Adv. Mater. 6/2023)', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202370039

Keith D; Gorman SK; He Y; Kranz L; Simmons MY, 2022, 'Impact of charge noise on electron exchange interactions in semiconductors', Npj Quantum Information, 8, http://dx.doi.org/10.1038/s41534-022-00523-5

Keith D; Chung Y; Kranz L; Thorgrimsson B; Gorman SK; Simmons MY, 2022, 'Ramped measurement technique for robust high-fidelity spin qubit readout', Science Advances, 8, http://dx.doi.org/10.1126/sciadv.abq0455

Osika EN; Gorman SK; Monir S; Hsueh YL; Borscz M; Geng H; Thorgrimsson B; Simmons MY; Rahman R, 2022, 'Shelving and latching spin readout in atom qubits in silicon', Physical Review B, 106, http://dx.doi.org/10.1103/PhysRevB.106.075418

Kiczynski M; Gorman SK; Geng H; Donnelly MB; Chung Y; He Y; Keizer JG; Simmons MY, 2022, 'Engineering topological states in atom-based semiconductor quantum dots', Nature, 606, pp. 694 - 699, http://dx.doi.org/10.1038/s41586-022-04706-0

Keith D; Gorman SK; Kranz L; He Y; Keizer JG; Broome MA; Simmons MY, 2022, 'Erratum: Benchmarking high fidelity single-shot readout of semiconductor qubits (New J. Phys. (2019) 21 (063011) DOI: 10.1088/1367-2630/ab242c/meta)', New Journal of Physics, 24, http://dx.doi.org/10.1088/1367-2630/ac7479

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2022, 'Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054006

Kranz L; Gorman SK; Thorgrimsson B; He Y; Keith D; Keizer JG; Simmons MY, 2020, 'Exploiting a Single-Crystal Environment to Minimize the Charge Noise on Qubits in Silicon', Advanced Materials, 32, http://dx.doi.org/10.1002/adma.202003361

Kranz L; Gorman SK; Thorgrimsson B; He Y; Keith D; Keizer JG; Simmons MY, 2020, 'Quantum Computing: Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon (Adv. Mater. 40/2020)', Advanced Materials, 32, http://dx.doi.org/10.1002/adma.202070298

He Y; Gorman SK; Keith D; Kranz L; Keizer JG; Simmons MY, 2019, 'A two-qubit gate between phosphorus donor electrons in silicon', Nature, 571, pp. 371 - 375, http://dx.doi.org/10.1038/s41586-019-1381-2

Keith D; Gorman SK; Kranz L; He Y; Keizer JG; Broome MA; Simmons MY, 2019, 'Benchmarking high fidelity single-shot readout of semiconductor qubits', New Journal of Physics, 21, pp. 063011, http://dx.doi.org/10.1088/1367-2630/ab242c

Broome MA; Gorman SK; House MG; Hile SJ; Keizer JG; Keith D; Hill CD; Watson TF; Baker WJ; Hollenberg LCL; Simmons MY, 2018, 'Two-electron spin correlations in precision placed donors in silicon', Nature Communications, 9, pp. 980, http://dx.doi.org/10.1038/s41467-018-02982-x

Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, 'Addressable electron spin resonance using donors and donor molecules in silicon', Science Advances, 4, pp. eaaq1459, http://dx.doi.org/10.1126/sciadv.aaq1459

Gorman SK; Broome MA; House MG; Hile SJ; Keizer JG; Keith D; Watson TF; Baker WJ; Simmons MY, 2018, 'Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot', Applied Physics Letters, 112, pp. 243105, http://dx.doi.org/10.1063/1.5021500

Gorman SK; He Y; House MG; Keizer JG; Keith D; Fricke L; Hile SJ; Broome MA; Simmons MY, 2017, 'Tunneling Statistics for Analysis of Spin-Readout Fidelity', Physical Review Applied, 8, pp. 034019, http://dx.doi.org/10.1103/PhysRevApplied.8.034019

Broome MA; Watson TF; Keith D; Gorman SK; House MG; Keizer JG; Hile SJ; Baker W; Simmons MY, 2017, 'High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon', Physical Review Letters, 119, http://dx.doi.org/10.1103/PhysRevLett.119.046802

Broome MA; Gorman SK; Keizer JG; Watson TF; Hile SJ; Baker WJ; Simmons MY, 2016, 'Mapping the chemical potential landscape of a triple quantum dot', Physical Review B, 94, pp. 054314, http://dx.doi.org/10.1103/PhysRevB.94.054314

Gorman SK; Broome MA; Keizer JG; Watson TF; Hile SJ; Baker WJ; Simmons MY, 2016, 'Extracting inter-dot tunnel couplings between few donor quantum dots in silicon', New Journal of Physics, 18, pp. 053041, http://dx.doi.org/10.1088/1367-2630/18/5/053041

Gorman SK; Broome MA; Baker WJ; Simmons MY, 2015, 'Impact of nuclear spin dynamics on electron transport through donors', Physical Review B Condensed Matter and Materials Physics, 92, pp. 125413, http://dx.doi.org/10.1103/PhysRevB.92.125413

Shcherbakova OV; Pan AV; Gorman SK; Fedoseev SA; Golovchanskiy IA; Dou SX, 2012, 'Inhomogeneities in YBa₂Cu₃O₇ thin films with reduced thickness', PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 479, pp. 102 - 105, http://dx.doi.org/10.1016/j.physc.2011.12.009

Conference Posters

Misha AFMSH; Reiner J; Macha P; Chung Y; Gorman S; Lehner C; Keizer J; Simmons M, 2022, 'Atomic Precision Engineering Of Spin Qubits In Isotopically Purified 28Si', Sydney, presented at ICPS 2022, Sydney, 27 June 2022 - 30 June 2022

Preprints

Simmons M; Edlbauer H; Wang J; Huq AM; Thorvaldson I; Jones M; Misha AFM; Pappas W; Moehle C; Hsueh Y-L; Bornemann H; Gorman S; Chung Y; Keizer J; Kranz L, 2025, An 11-qubit atom processor in silicon, http://dx.doi.org/10.21203/rs.3.rs-6676321/v1

Donnelly MB; Rowlands J; Kranz L; Hsueh YL; Chung Y; Timofeev AV; Geng H; Singh-Gregory P; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2024, Noise Correlations in a 1D Silicon Spin Qubit Array, http://arxiv.org/abs/2405.03763v1

Thorvaldson I; Poulos D; Moehle CM; Misha SH; Edlbauer H; Reiner J; Geng H; Voisin B; Jones MT; Donnelly MB; Pena LF; Hill CD; Myers CR; Keizer JG; Chung Y; Gorman SK; Kranz L; Simmons MY, 2024, Grover's algorithm in a four-qubit silicon processor above the fault-tolerant threshold, http://dx.doi.org/10.1038/s41565-024-01853-5

Monir S; Osika EN; Gorman SK; Thorvaldson I; Hsueh Y-L; Macha P; Kranz L; Reiner J; Simmons MY; Rahman R, 2023, Impact of measurement backaction on nuclear spin qubits in silicon, http://dx.doi.org/10.48550/arxiv.2310.12656

Hogg MR; Pakkiam P; Gorman SK; Timofeev AV; Chung Y; Gulati GK; House MG; Simmons MY, 2022, Single-shot readout of multiple donor electron spins with a gate-based sensor, http://dx.doi.org/10.48550/arxiv.2203.09248

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2021, Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon, http://dx.doi.org/10.48550/arxiv.2105.02906

Keith D; Gorman SK; Kranz L; He Y; Keizer JG; Broome MA; Simmons MY, 2018, Benchmarking high fidelity single-shot readout of semiconductor qubits, http://dx.doi.org/10.48550/arxiv.1811.03630

Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, Addressable electron spin resonance using donors and donor molecules in silicon, http://dx.doi.org/10.48550/arxiv.1807.10290

Broome MA; Watson TF; Keith D; Gorman SK; House MG; Keizer JG; Hile SJ; Baker W; Simmons MY, 2018, High Fidelity Single-Shot Singlet-Triplet Readout of Precision Placed Donors in Silicon, http://dx.doi.org/10.48550/arxiv.1807.10285

Gorman SK; Broome MA; House MG; Hile SJ; Keizer JG; Keith D; Watson TF; Baker WJ; Simmons MY, 2018, Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot, http://dx.doi.org/10.48550/arxiv.1807.10289

Broome MA; Gorman SK; House MG; Hile SJ; Keizer JG; Keith D; Hill CD; Watson TF; Baker WJ; Hollenberg LCL; Simmons MY, 2018, Two-Electron Spin Correlations in Precision Placed Donors in Silicon, http://dx.doi.org/10.48550/arxiv.1807.10295

Gorman SK; He Y; House MG; Keizer JG; Keith D; Fricke L; Hile SJ; Broome MA; Simmons MY, 2017, Tunneling statistics for analysis of spin-readout fidelity, http://dx.doi.org/10.1103/PhysRevApplied.8.034019

Broome MA; Gorman SK; Keizer JG; Watson TF; Hile SJ; Baker WJ; Simmons MY, 2016, Mapping the Chemical Potential Landscape of a Triple Quantum Dot, http://dx.doi.org/10.48550/arxiv.1609.03381

Gorman SK; Broome MA; Keizer JG; Watson TF; Hile SJ; Baker WJ; Simmons MY, 2016, Extracting inter-dot tunnel couplings between few donor quantum dots in silicon, http://dx.doi.org/10.1088/1367-2630/18/5/053041

Gorman SK; Broome MA; Baker WJ; Simmons MY, 2015, The impact of nuclear spin dynamics on electron transport through donors, http://dx.doi.org/10.48550/arxiv.1509.05407

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