By Dr Oleh Klochan

Journal articles

Rendell MJ; Liles SD; Bladwell S; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Sushkov OP; Hamilton AR, 2025, 'Probing Fermi surface parity with spin-resolved transverse magnetic focusing', Physical Review B, 111, http://dx.doi.org/10.1103/PhysRevB.111.L041113

Wang DQ; Krix Z; Sushkov OP; Farrer I; Ritchie DA; Hamilton AR; Klochan O, 2023, 'Formation of Artificial Fermi Surfaces with a Triangular Superlattice on a Conventional Two-Dimensional Electron Gas', Nano Letters, 23, pp. 1705 - 1710, http://dx.doi.org/10.1021/acs.nanolett.2c04358

Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2023, 'Spin polarization and spin-dependent scattering of holes observed in transverse magnetic focusing', Physical Review B, 107, http://dx.doi.org/10.1103/PhysRevB.107.045304

Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2022, 'Gate voltage dependent Rashba spin splitting in hole transverse magnetic focusing', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.245305

Al-Ani IAM; As'Ham K; Klochan O; Hattori HT; Huang L; Miroshnichenko AE, 2022, 'Recent advances on strong light-matter coupling in atomically thin TMDC semiconductor materials', Journal of Optics United Kingdom, 24, http://dx.doi.org/10.1088/2040-8986/ac5cd7

Ashlea Alava Y; Wang DQ; Chen C; Ritchie DA; Ludwig A; Ritzmann J; Wieck AD; Klochan O; Hamilton AR, 2022, 'Ultra-Shallow All-Epitaxial Aluminum Gate GaAs/AlxGa1−xAs Transistors with High Electron Mobility', Advanced Functional Materials, 32, http://dx.doi.org/10.1002/adfm.202104213

Hudson KL; Srinivasan A; Goulko O; Adam J; Wang Q; Yeoh LA; Klochan O; Farrer I; Ritchie DA; Ludwig A; Wieck AD; von Delft J; Hamilton AR, 2021, 'New signatures of the spin gap in quantum point contacts', Nature Communications, 12, http://dx.doi.org/10.1038/s41467-020-19895-3

Keser AC; Wang DQ; Klochan O; Ho DYH; Tkachenko OA; Tkachenko VA; Culcer D; Adam S; Farrer I; Ritchie DA; Sushkov OP; Hamilton AR, 2021, 'Geometric Control of Universal Hydrodynamic Flow in a Two-Dimensional Electron Fluid', Physical Review X, 11, pp. 031030, http://dx.doi.org/10.1103/PhysRevX.11.031030

Ashlea Alava Y; Wang DQ; Chen C; Ritchie DA; Klochan O; Hamilton AR, 2021, 'High electron mobility and low noise quantum point contacts in an ultra-shallow all-epitaxial metal gate GaAs/AlxGa1−xAs heterostructure', Applied Physics Letters, 119, http://dx.doi.org/10.1063/5.0053816

Wang DQ; Reuter D; Wieck AD; Hamilton AR; Klochan O, 2020, 'Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential', Applied Physics Letters, 117, http://dx.doi.org/10.1063/5.0009462

Xiang FX; Srinivasan A; Du ZZ; Klochan O; Dou SX; Hamilton AR; Wang XL, 2018, 'Thickness-dependent electronic structure in WTe2 thin films', Physical Review B, 98, http://dx.doi.org/10.1103/PhysRevB.98.035115

Srinivasan A; Miserev DS; Hudson KL; Klochan O; Muraki K; Hirayama Y; Reuter D; Wieck AD; Sushkov OP; Hamilton AR, 2017, 'Detection and Control of Spin-Orbit Interactions in a GaAs Hole Quantum Point Contact', Physical Review Letters, 118, http://dx.doi.org/10.1103/PhysRevLett.118.146801

Wang DQ; Klochan O; Hung JT; Culcer D; Farrer I; Ritchie DA; Hamilton AR, 2016, 'Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot', Nano Letters, 16, pp. 7685 - 7689, http://dx.doi.org/10.1021/acs.nanolett.6b03752

Srinivasan A; Hudson KL; Miserev D; Yeoh LA; Klochan O; Muraki K; Hirayama Y; Sushkov OP; Hamilton AR, 2016, 'Electrical control of the sign of the g factor in a GaAs hole quantum point contact (vol 94, 041406, 2016)', PHYSICAL REVIEW B, 94, http://dx.doi.org/10.1103/PhysRevB.94.079909

Srinivasan A; Hudson KL; Miserev D; Yeoh LA; Klochan O; Muraki K; Hirayama Y; Sushkov OP; Hamilton AR, 2016, 'Electrical control of the sign of the g factor in a GaAs hole quantum point contact', Physical Review B, 94, http://dx.doi.org/10.1103/PhysRevB.94.041406

Wang DQ; Hamilton AR; Farrer I; Ritchie DA; Klochan O, 2016, 'Double-layer-gate architecture for few-hole GaAs quantum dots', Nanotechnology, 27, http://dx.doi.org/10.1088/0957-4484/27/33/334001

Li T; Yeoh LA; Srinivasan A; Klochan O; Ritchie DA; Simmons MY; Sushkov OP; Hamilton AR, 2016, 'Erratum: Manifestation of a non-Abelian Berry phase in a p -type semiconductor system (Physical Review B - Condensed Matter and Materials Physics (2016) 93 (205424) DOI: 10.1103/PhysRevB.93.205424)', Physical Review B, 93, http://dx.doi.org/10.1103/PhysRevB.93.239903

Akhgar G; Klochan O; Willems Van Beveren LH; Edmonds MT; Maier F; Spencer BJ; McCallum JC; Ley L; Hamilton AR; Pakes CI, 2016, 'Strong and tunable spin-orbit coupling in a two-dimensional hole gas in ionic-liquid gated diamond devices', Nano Letters, 16, pp. 3768 - 3773, http://dx.doi.org/10.1021/acs.nanolett.6b01155

Li T; Yeoh LA; Srinavasan A; Klochan O; Ritchie DA; Simmons MY; Sushkov OP; Hamilton AR; Srinivasan A, 2016, 'Manifestation of a non-Abelian Berry phase in a p -type semiconductor system', Physical Review B, 93, pp. 205424, http://dx.doi.org/10.1103/PhysRevB.93.205424

Rendell M; Klochan O; Srinivasan A; Farrer I; Ritchie DA; Hamilton AR, 2015, 'Transverse magnetic focussing of heavy holes in a (100) GaAs quantum well', Semiconductor Science and Technology, 30, http://dx.doi.org/10.1088/0268-1242/30/10/102001

Chen JCH; Klochan O; Micolich AP; Das Gupta K; Sfigakis F; Ritchie DA; Trunov K; Reuter D; Wieck AD; Hamilton AR, 2015, 'Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts', Applied Physics Letters, 106, http://dx.doi.org/10.1063/1.4918934

Klochan O; Hamilton AR; Das Gupta K; Sfigakis F; Beere HE; Ritchie DA, 2015, 'Landau level spin diode in a GaAs two dimensional hole system', New Journal of Physics, 17, pp. 1 - 6, http://dx.doi.org/10.1088/1367-2630/17/3/033035

Edmonds MT; Willems Van Beveren LH; Klochan O; Cervenka J; Ganesan K; Prawer S; Ley L; Hamilton AR; Pakes CI, 2015, 'Spin-orbit interaction in a two-dimensional hole gas at the surface of hydrogenated diamond', Nano Letters, 15, pp. 16 - 20, http://dx.doi.org/10.1021/nl502081y

Yeoh LA; Srinivasan A; Klochan O; Winkler R; Zülicke U; Simmons MY; Ritchie DA; Pepper M; Hamilton AR, 2014, 'Noncollinear paramagnetism of a GaAs two-dimensional hole system', Physical Review Letters, 113, pp. 236401, http://dx.doi.org/10.1103/PhysRevLett.113.236401

Lo ST; Klochan O; Liu CH; Wang WH; Hamilton AR; Liang CT, 2014, 'Transport in disordered monolayer MoS2 nanoflakes - Evidence for inhomogeneous charge transport', Nanotechnology, 25, http://dx.doi.org/10.1088/0957-4484/25/37/375201

Carrad DJ; Burke AM; Klochan O; See AM; Hamilton AR; Rai A; Reuter D; Wieck AD; Micolich AP, 2014, 'Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot', Physical Review B, 89, pp. 155313-1 - 155313-8, http://dx.doi.org/10.1103/PhysRevB.89.155313

See AM; Klochan O; Micolich AP; Aagesen M; Lindelof PE; Hamilton AR, 2013, 'A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor', Journal of Physics: Condensed Matter, 25, http://dx.doi.org/10.1088/0953-8984/25/50/505302

Srinivasan A; Yeoh LA; Klochan O; Martin TP; Chen JCH; Micolich AP; Hamilton AR; Reuter D; Wieck A, 2013, 'Using a tunable quantum wire to measure the large out-of-plane spin splitting of quasi two-dimensional holes in a GaAs nanostructure', Nano Letters, 13, pp. 148 - 152, http://dx.doi.org/10.1021/nl303596s

Van beveren LHW; Tan KY; Lai ; Klochan O; Dzurak AS; Hamilton AR, 2012, 'Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime', Materials Science Forum, 700, pp. 93 - 95

Klochan O; Micolich AP; Ho L; Hamilton AR; Muraki K; Hirayama Y, 2009, 'The interplay between one-dimensional confinement and two-dimensional crystallographic anisotropy effects in ballistic hole quantum wires', New Journal of Physics, 11, http://dx.doi.org/10.1088/1367-2630/11/4/043018

Danneau RJ; Klochan O; Clarke WR; Ho L; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2008, '0.7 Structure and zero bias anomaly in ballistic hole quantum wires', Physical Review Letters, 100

Ho L; Clarke WR; Micolich AP; Danneau RJ; Klochan O; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2008, 'Effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems', Physical Review B: Condensed Matter and Materials Physics, 77

Hamilton AR; Klochan O; Danneau RJ; Clarke WR; Ho L; Micolich AP; Simmons MY; Pepper M; Ritchie DA; Muraki K; Hirayama Y, 2008, 'Quantum transport in one-dimensional GaAs hole systems', INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 5, pp. 318 - 330, http://dx.doi.org/10.1504/IJNT.2008.016921

Hamilton AR; Danneau RJ; Klochan O; Clarke WR; Micolich AP; Ho L; Simmons MY; Ritchie DA; Pepper M; Muraki K; Hirayama Y, 2008, 'The 0.7 anomaly in one-dimensional hole quantum wires', Journal of Physics: Condensed Matter, 20, http://dx.doi.org/10.1088/0953-8984/20/16/164205

Ruess FJ; Weber B; Goh KE; Klochan O; Hamilton AR; Simmons MY, 2007, 'One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy', Physical Review - Section B - Condensed Matter, 76, pp. 85403 - 85410

Klochan O; Clarke WR; Danneau RJ; Micolich AP; Ho L; Hamilton AR; Muraki K; Hirayama Y, 2006, 'Ballistic transport in induced one-dimensional hole systems', Applied Physics Letters, 89, http://dx.doi.org/10.1063/1.2337525

Danneau RJ; Clarke WR; Klochan O; Micolich AP; Hamilton AR; Simmons MY; Pepper M; Ritchie DA, 2006, 'Conductance quantization and the 0.7×2e2/h conductance anomaly in one-dimensional hole systems', Applied Physics Letters, 88, http://dx.doi.org/10.1063/1.2161814

Danneau RJ; Klochan O; Clarke WR; Ho L; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA; Zulicke U, 2006, 'Zeeman spin-splitting anisotropy in ballistic hole quantum wires', Physical Review Letters, 97, http://dx.doi.org/10.1103/PhysRevLett.97.026403

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