By Dr Fiacre Rougieux

Conference Papers

Rougieux F; Nguyen H; Maconald D; Mitchell B; Falster R, 2017, 'Growth of oxygen precipitates and dislocation in Cz silicon: Impact on the minority carrier lifetime', WIP-Renewable Energies, Munich, Germany, Amsterdam, presented at 35th European Photovoltaic Solar Energy Conference, Amsterdam, 24 September 2017 - 28 September 2017

Shen D; Sun C; Zheng P; Macdonald D; Rougieux F, 2016, 'Carrier induced degradation in compensated n-type silicon solar cells', Singapore, presented at 26th Photovoltaic Science and Engineering Conference, Singapore, 24 October 2016 - 28 October 2016

Sun C; Nguyen HT; Rougieux FE; Macdonald D, 2016, 'Characterization of Cu and Ni Precipitates in n- and p-type Czochralski-grown Silicon by Photoluminescence', in Energy Procedia, pp. 880 - 885, http://dx.doi.org/10.1016/j.egypro.2016.07.097

Zheng P; Rougieux FE; Samundsett C; Yang X; Wan Y; Degoulange J; Einhaus R; Rivat P; MacDonald D, 2016, 'Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell', in Energy Procedia, pp. 434 - 442, http://dx.doi.org/10.1016/j.egypro.2016.07.124

Grant NE; Rougieux FE; Macdonald D, 2016, 'Low temperature activation of grown-in defects limiting the lifetime of high purity n-type float-zone silicon wafers', in Solid State Phenomena, pp. 120 - 125, http://dx.doi.org/10.4028/www.scientific.net/SSP.242.120

Rougieux FE; Grant NE; Macdonald D; Murphy JD, 2015, 'Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?', in 2015 IEEE 42nd Photovoltaic Specialist Conference Pvsc 2015, http://dx.doi.org/10.1109/PVSC.2015.7355687

Macdonald D; Liu A; Nguyen HT; Lim SY; Rougieux F, 2015, 'Physical Modelling of Luminescence Spectra from Crystalline Silicon', WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 31st European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 14 September 2015 - 18 September 2015

Nguyen HT; Rougieux FE; Wang F; Macdonald D, 2015, 'Effects of Solar Cell Processing Steps on Dislocation Luminescence in Multicrystalline Silicon', in Energy Procedia, pp. 619 - 625, http://dx.doi.org/10.1016/j.egypro.2015.07.089

Sun C; Liu A; Rougieux FE; MacDonald D, 2015, 'Lifetime Spectroscopy and Hydrogenation of Chromium in n- and p-type Cz Silicon', in Energy Procedia, pp. 646 - 650, http://dx.doi.org/10.1016/j.egypro.2015.07.092

Rougieux F; Samundsett C; Zheng P; Fong K; Macdonald D, 2014, 'Towards high efficiency UMG silicon solar cells', Kyoto, presented at 24th Photovoltaic Science and Engineering Conference, Kyoto, Japan,, Kyoto, 23 October 2014 - 27 October 2014

Zheng P; Rougieux FE; Macdonald D; Cuevas A, 2014, 'Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon', in 2014 IEEE 40th Photovoltaic Specialist Conference Pvsc 2014, pp. 129 - 134, http://dx.doi.org/10.1109/PVSC.2014.6925391

Macdonald D; Zheng P; Rougieux F, 2014, 'Limiting defects in high-lifetime n-type silicon wafers', Breckenridge, presented at 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, 27 July 2014 - 30 July 2014

Grant NE; Rougieux FE; Macdonald D; Bullock J; Wan Y, 2014, 'Recombination active defects limiting the lifetime of float-zone silicon', Breckenridge, presented at 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, 27 July 2014 - 30 July 2014

Nguyen HT; Rougieux FE; Baker-Finch S; Macdonald D, 2014, 'Temperature Dependence of Band-Band Absorption and Radiative Re-combination in Crystalline Silicon from Spectral Photoluminescence', Denver, presented at 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado, Denver, 08 June 2014 - 13 June 2014

Zheng P; Rougieux FE; Macdonald D; Cuevas A, 2014, 'Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level: Extension to p-type Silicon', in 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), IEEE, CO, Denver, pp. 125 - 130, presented at 40th IEEE Photovoltaic Specialists Conference (PVSC), CO, Denver, 08 June 2014 - 13 June 2014, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000366638900029&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Grant N; Markevich VP; Mullins J; Peaker A; Rougieux FIACRE; Macdonald D; Murphy JD, 2014, 'Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon', Lille, presented at European Materials Research Society Spring Meeting, Lille, 26 May 2014 - 28 May 2014

Rougieux FE; Grant NE; Macdonald D, 2014, 'Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers', in Energy Procedia, pp. 81 - 84, http://dx.doi.org/10.1016/j.egypro.2014.12.346

Grant NE; McIntosh KR; Tan J; Rougieux FE; Wan Y; Barugkin C, 2013, 'Light Enhanced Hydrofluoric Acid Passivation for Evaluating Silicon Bulk Lifetimes', Paris, presented at 28th European Photovoltaic Solar Energy Conference, Paris, France, Paris, 30 September 2013 - 04 October 2013

Lim S; Rougieux FE; Macdonald D, 2013, 'Boron-oxygen defect imaging in p-type Czochralskisilicon', Breckenridge, presented at 23rdWorkshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Breckenridge, Colorado, Breckenridge, 28 July 2013 - 31 July 2013

Rougieux F; Phang SP; Shalav A; Lim B; Macdonald D, 2012, 'Acceptor-related metastable defects in compensated n-type silicon', Hangzhou, presented at 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, 05 November 2012 - 09 November 2012

Rougieux F; Forster M; Macdonald D; Cuevas A, 2012, 'Impact of minority-impurity scattering on the carrier mobility in compensated silicon', Hangzhou, presented at 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, 05 November 2012 - 09 November 2012

Forster M; Rougieux FE; Cuevas A; Dehestru B; Thomas A; Fourmond E; Lemiti M, 2012, 'Incomplete ionization and carrier mobility in compensated p-type and n-type silicon', in 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, IEEE, pp. 1 - 6, presented at 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 03 June 2012 - 08 June 2012, http://dx.doi.org/10.1109/pvsc-vol2.2013.6656739

Cuevas A; Forster M; Rougieux F; Macdonald D, 2012, 'Compensation engineering for silicon solar cells', in Energy Procedia, pp. 67 - 77, http://dx.doi.org/10.1016/j.egypro.2012.02.008

Rougieux FE; MacDonald D; Cuevas A, 2011, 'Transport properties of p-type compensated silicon at room temperature', in Progress in Photovoltaics Research and Applications, pp. 787 - 793, http://dx.doi.org/10.1002/pip.1036

Rougieux F; Thiboust M; Zheng P; Tan J; Grant N; Macdonald D; Cuevas A, 2011, 'A contactless method for determining the carrier mobility sum in silicon wafers for solar cells', Seattle, presented at 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, 19 June 2011 - 24 June 2011

Rougieux F, 2011, 'Recombination activity and impact of the boron-oxygen defect in compensated n-type silicon', Seattle, presented at 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, 19 June 2011 - 24 June 2011

Rougieux FE; Thiboust M; Grant N; Tan J; Macdonald D; Cuevas A, 2011, 'Contactless determination of the injection dependent carrier mobility sum in silicon', in 2011 37th IEEE Photovoltaic Specialists Conference, IEEE, pp. 002928 - 002928, presented at 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 19 June 2011 - 24 June 2011, http://dx.doi.org/10.1109/pvsc.2011.6186558

Rougieux FE; Macdonald D; Cuevas A; Lim B; Schmidt J, 2011, 'Formation kinetics and extent of the boron oxygen defect in compensated n-type silicon', in 2011 37th IEEE Photovoltaic Specialists Conference, IEEE, pp. 003424 - 003424, presented at 2011 37th IEEE Photovoltaic Specialists Conference (PVSC 2011), 19 June 2011 - 24 June 2011, http://dx.doi.org/10.1109/pvsc.2011.6186682

Lim B; Rougieux F; MacDonald D; Bothe K; Schmidt J, 2010, 'Generation and annihilation of boron-oxygen-related recombination centers in compensated p - And n -type silicon', in Journal of Applied Physics, http://dx.doi.org/10.1063/1.3511741

Lim B; Liu A; Rougieux F; Macdonald D; Bothe K; Schmidt J, 2010, 'Boron-Oxygen-Related Recombination Centers in Compensated Silicon', WIP-Renewable Energies, Munich, Germany, Valencia, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valencia, 06 September 2010 - 10 September 2010

Rougieux F; Macdonald D; Cuevas A; Ruffel S; Schmidt J; Lim B, 2010, 'Electron and hole mobility reduction and Hall Factor in compensated p-type silicon', WIP-Renewable Energies, Munich, Germany, Valenci, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valenci, 06 September 2010 - 10 September 2010

Tan J; Macdonald D; Rougieux F; Cuevas A, 2010, 'revised equation for the formation rate of iron-boron pairs in silicon', WIP-Renewable Energies, Munich, Germany, Valencia, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valencia, 06 September 2010 - 10 September 2010

Macdonald D; Rougieux F; Cuevas A; Lim B; Schmidt J; Di Sabatino M; Geerligs LJ, 2009, 'Boron-oxygen defects in compensated p-type Czochralski silicon', WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 21 September 2009 - 25 September 2009

Rougieux F; Macdonald D; McIntosh K; Cuevas A, 2009, 'Oxidation-induced inversion layer in compensated p-type silicon', WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 21 September 2009 - 25 September 2009

Conference Posters

Deng S; Gentle A; Song N; Roemer U; Cai Y; Cheng Y; Huang J; Rougieux F; Green M; Song N, 2024, 'Influence of carbon incorporation on PECVD deposited poly-Si passivating contact', Sydney, Australia, presented at Asia Pacific Solar Research Conference 2024, Sydney, Australia, 03 December 2024 - 05 December 2024

Jafari S; Zhu Y; Rougieux F; Hameiri Z, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Marseille, France, presented at European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France, 09 September 2019 - 13 September 2019

Conference Presentations

Song N; Ng C; Roemer U; Deng S; Cai Y; Rougieux F, 2021, 'Tuning the crystalline and optical properties of sputtered polysilicon carbide contacts', presented at 31st International Photovoltaic Science and Engineering Conference, Sydney, 13 December 2021 - 15 December 2021

Ciesla A; Chen R; Rougieux F; Hallam B; Chan C; Chen D; Chong C; Abbott M; Wenham S, 2019, 'Hydrogen Charge States & Recombination Activity in PV Silicon', presented at 18th Conference - Gettering and Defect Engineering in Semiconductor Technology - GADEST, Zeuthen, Germany, 22 September 2019 - 27 September 2019

Rougieux F; Grant N; Macdonald D; Murphy J, 2014, 'Nature of some recombination active defect in CZ and FZ n-type silicon for high efficiency solar cells', presented at European Materials Research Society Spring Meeting, Lille, France,, 26 April 2014 - 30 April 2014

Rougieux F; Grant NE; Macdonald D, 2013, 'Multi-millisecond n-type Si wafers for high efficiency silicon solar cells: spatial homogeneity and defect engineering', presented at 3rdnPVWorkshop,Chambery, France,, 22 April 2013 - 23 April 2013

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