By Dr Danielle Holmes

Journal articles

Lim SQ; Johnson BC; Rubanov S; Klingner N; Gong B; Jakob AM; Holmes D; Jamieson DN; Williams JS; McCallum JC, 2025, 'from ultrahigh fluence ion implantation', PHYSICAL REVIEW MATERIALS, 9, http://dx.doi.org/10.1103/787r-9jps

Yu X; Wilhelm B; Holmes D; Vaartjes A; Schwienbacher D; Nurizzo M; Kringhøj A; Blankenstein MRV; Jakob AM; Gupta P; Hudson FE; Itoh KM; Murray RJ; Blume-Kohout R; Ladd TD; Anand N; Dzurak AS; Sanders BC; Jamieson DN; Morello A, 2025, 'Schrödinger cat states of a nuclear spin qudit in silicon', Nature Physics, 21, pp. 362 - 367, http://dx.doi.org/10.1038/s41567-024-02745-0

Holmes D, 2025, 'Low-noise hole spin qubits in germanium', Nature Materials, http://dx.doi.org/10.1038/s41563-025-02307-6

Jakob AM; Robson SG; Firgau HR; Mourik V; Schmitt V; Holmes D; Posselt M; Mayes ELH; Spemann D; McCallum JC; Morello A; Jamieson DN, 2024, 'Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon', Advanced Materials, 36, http://dx.doi.org/10.1002/adma.202405006

Holmes D; Wilhelm B; Jakob AM; Yu X; Hudson FE; Itoh KM; Dzurak AS; Jamieson DN; Morello A, 2024, 'Improved Placement Precision of Donor Spin Qubits in Silicon using Molecule Ion Implantation', Advanced Quantum Technologies, 7, http://dx.doi.org/10.1002/qute.202300316

Robson SG; Jakob AM; Holmes D; Lim SQ; Johnson BC; Jamieson DN, 2021, 'High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector', Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, 487, pp. 1 - 7, http://dx.doi.org/10.1016/j.nimb.2020.11.005

Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2021, 'Isotopic enrichment of silicon by high fluence 28Si- ion implantation', Physical Review Materials, 5, http://dx.doi.org/10.1103/PhysRevMaterials.5.014601

Holmes D; Lawrie WIL; Johnson BC; Asadpoordarvish A; McCallum JC; McCamey DR; Jamieson DN, 2019, 'Activation and electron spin resonance of near-surface implanted bismuth donors in silicon', Physical Review Materials, 3, http://dx.doi.org/10.1103/PhysRevMaterials.3.083403

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