ORCID as entered in ROS

Select Publications
2015, 'Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor', Nano Letters, 15, pp. 4622 - 4627, http://dx.doi.org/10.1021/acs.nanolett.5b01306
,2015, 'Theory of one and two donors in silicon', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154208
,2014, 'An exchange-coupled donor molecule in silicon', Nano Letters, 14, pp. 5672 - 5676, http://dx.doi.org/10.1021/nl5023942
,2014, 'Single-shot readout and relaxation of singlet and triplet states in exchange-coupled P 31 electron spins in silicon', Physical Review Letters, 112, http://dx.doi.org/10.1103/PhysRevLett.112.236801
,2014, 'Splitting valleys in Si/ SiO2: Identification and control of interface states', Physical Review B Condensed Matter and Materials Physics, 89, http://dx.doi.org/10.1103/PhysRevB.89.205307
,2013, 'Genetic design of enhanced valley splitting towards a spin qubit in silicon', Nature Communications, 4, http://dx.doi.org/10.1038/ncomms3396
,2012, 'Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO 2 interface', Physical Review B Condensed Matter and Materials Physics, 86, http://dx.doi.org/10.1103/PhysRevB.86.035317
,2012, 'Valley-based noise-resistant quantum computation using Si quantum dots', Physical Review Letters, 108, http://dx.doi.org/10.1103/PhysRevLett.108.126804
,2011, 'Intervalley coupling for interface-bound electrons in silicon: An effective mass study', Physical Review B Condensed Matter and Materials Physics, 84, http://dx.doi.org/10.1103/PhysRevB.84.155320
,2010, 'Extended interface states enhance valley splitting in Si/ SiO2', Physical Review B Condensed Matter and Materials Physics, 82, http://dx.doi.org/10.1103/PhysRevB.82.245314
,2009, 'Physical mechanisms of interface-mediated intervalley coupling in Si', Physical Review B Condensed Matter and Materials Physics, 80, http://dx.doi.org/10.1103/PhysRevB.80.081305
,2007, 'Reliability of the Heitler-London approach for the exchange coupling between electrons in semiconductor nanostructures', Physical Review B Condensed Matter and Materials Physics, 76, http://dx.doi.org/10.1103/PhysRevB.76.233302
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