By Associate Professor Henry Yang

Preprints

Hansen I; Seedhouse AE; Chan KW; Hudson F; Itoh KM; Laucht A; Saraiva A; Yang CH; Dzurak AS, 2021, Implementation of the SMART protocol for global qubit control in silicon, http://dx.doi.org/10.1063/5.0096467

Seedhouse AE; Hansen I; Laucht A; Yang CH; Dzurak AS; Saraiva A, 2021, Quantum Computation Protocol for Dressed Spins in a Global Field, http://dx.doi.org/10.1103/PhysRevB.104.235411

Hansen I; Seedhouse AE; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2021, The SMART protocol -- Pulse engineering of a global field for robust and universal quantum computation, http://dx.doi.org/10.1103/PhysRevA.104.062415

Vahapoglu E; Slack-Smith JP; Leon RCC; Lim WH; Hudson FE; Day T; Cifuentes JD; Tanttu T; Yang CH; Saraiva A; Abrosimov NV; Pohl H-J; Thewalt MLW; Laucht A; Dzurak AS; Pla JJ, 2021, Coherent control of electron spin qubits in silicon using a global field, http://dx.doi.org/10.48550/arxiv.2107.14622

Evans TJ; Huang W; Yoneda J; Harper R; Tanttu T; Chan KW; Hudson FE; Itoh KM; Saraiva A; Yang CH; Dzurak AS; Bartlett SD, 2021, Fast Bayesian tomography of a two-qubit gate set in silicon, http://dx.doi.org/10.1103/PhysRevApplied.17.024068

Saraiva A; Lim WH; Yang CH; Escott CC; Laucht A; Dzurak AS, 2021, Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits, http://arxiv.org/abs/2107.13664v2

Huang JY; Lim WH; Leon RCC; Yang CH; Hudson FE; Escott CC; Saraiva A; Dzurak AS; Laucht A, 2021, A high-sensitivity charge sensor for silicon qubits above one kelvin, http://dx.doi.org/10.1021/acs.nanolett.1c01003

Laucht A; Hohls F; Ubbelohde N; Gonzalez-Zalba MF; Reilly DJ; Stobbe S; Schröder T; Scarlino P; Koski JV; Dzurak A; Yang C-H; Yoneda J; Kuemmeth F; Bluhm H; Pla J; Hill C; Salfi J; Oiwa A; Muhonen JT; Verhagen E; LaHaye MD; Kim HH; Tsen AW; Culcer D; Geresdi A; Mol JA; Mohan V; Jain PK; Baugh J, 2021, Roadmap on quantum nanotechnologies, http://dx.doi.org/10.48550/arxiv.2101.07882

Vahapoglu E; Slack-Smith JP; Leon RCC; Lim WH; Hudson FE; Day T; Tanttu T; Yang CH; Laucht A; Dzurak AS; Pla JJ, 2020, Single-electron spin resonance in a nanoelectronic device using a global field, http://dx.doi.org/10.1126/sciadv.abg9158

Leon RCC; Yang CH; Hwang JCC; Lemyre JC; Tanttu T; Huang W; Huang JY; Hudson FE; Itoh KM; Laucht A; Pioro-Ladrière M; Saraiva A; Dzurak AS, 2020, Bell-state tomography in a silicon many-electron artificial molecule, http://dx.doi.org/10.1038/s41467-021-23437-w

Yoneda J; Huang W; Feng M; Yang CH; Chan KW; Tanttu T; Gilbert W; Leon RCC; Hudson FE; Itoh KM; Morello A; Bartlett SD; Laucht A; Saraiva A; Dzurak AS, 2020, Coherent spin qubit transport in silicon, http://dx.doi.org/10.1038/s41467-021-24371-7

Gilbert W; Saraiva A; Lim WH; Yang CH; Laucht A; Bertrand B; Rambal N; Hutin L; Escott CC; Vinet M; Dzurak AS, 2020, Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing, http://dx.doi.org/10.48550/arxiv.2004.11558

Chan KW; Sahasrabudhe H; Huang W; Wang Y; Yang HC; Veldhorst M; Hwang JCC; Mohiyaddin FA; Hudson FE; Itoh KM; Saraiva A; Morello A; Laucht A; Rahman R; Dzurak AS, 2020, Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon, http://dx.doi.org/10.1021/acs.nanolett.0c04771

Seedhouse A; Tanttu T; Leon RCC; Zhao R; Tan KY; Hensen B; Hudson FE; Itoh KM; Yoneda J; Yang CH; Morello A; Laucht A; Coppersmith SN; Saraiva A; Dzurak AS, 2020, Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control, http://dx.doi.org/10.1103/PRXQuantum.2.010303

Hensen B; Huang WW; Yang C-H; Chan KW; Yoneda J; Tanttu T; Hudson FE; Laucht A; Itoh KM; Ladd TD; Morello A; Dzurak AS, 2019, A silicon quantum-dot-coupled nuclear spin qubit, http://dx.doi.org/10.48550/arxiv.1904.08260

Yang CH; Leon RCC; Hwang JCC; Saraiva A; Tanttu T; Huang W; Lemyre JC; Chan KW; Tan KY; Hudson FE; Itoh KM; Morello A; Pioro-Ladrière M; Laucht A; Dzurak AS, 2019, Silicon quantum processor unit cell operation above one Kelvin, http://dx.doi.org/10.1038/s41586-020-2171-6

Leon RCC; Yang CH; Hwang JCC; Lemyre JC; Tanttu T; Huang W; Chan KW; Tan KY; Hudson FE; Itoh KM; Morello A; Laucht A; Pioro-Ladriere M; Saraiva A; Dzurak AS, 2019, Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot, http://dx.doi.org/10.1038/s41467-019-14053-w

Zhao R; Tanttu T; Tan KY; Hensen B; Chan KW; Hwang JCC; Leon RCC; Yang CH; Gilbert W; Hudson FE; Itoh KM; Kiselev AA; Ladd TD; Morello A; Laucht A; Dzurak AS, 2018, Single-spin qubits in isotopically enriched silicon at low magnetic field, http://dx.doi.org/10.48550/arxiv.1812.08347

Zeng J; Yang CH; Dzurak AS; Barnes E, 2018, Geometric formalism for constructing arbitrary single-qubit dynamically corrected gates, http://dx.doi.org/10.1103/PhysRevA.99.052321

West A; Hensen B; Jouan A; Tanttu T; Yang CH; Rossi A; Gonzalez-Zalba MF; Hudson FE; Morello A; Reilly DJ; Dzurak AS, 2018, Gate-based single-shot readout of spins in silicon, http://dx.doi.org/10.1038/s41565-019-0400-7

Tanttu T; Hensen B; Chan KW; Yang H; Huang W; Fogarty M; Hudson F; Itoh K; Culcer D; Laucht A; Morello A; Dzurak A, 2018, Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction, http://dx.doi.org/10.1103/PhysRevX.9.021028

Yang CH; Chan KW; Harper R; Huang W; Evans T; Hwang JCC; Hensen B; Laucht A; Tanttu T; Hudson FE; Flammia ST; Itoh KM; Morello A; Bartlett SD; Dzurak AS, 2018, Silicon qubit fidelities approaching incoherent noise limits via pulse engineering, http://dx.doi.org/10.1038/s41928-019-0234-1

Huang C-H; Yang CH; Chen C-C; Dzurak AS; Goan H-S, 2018, High-fidelity and robust two-qubit gates for quantum-dot spin qubits in silicon, http://dx.doi.org/10.1103/PhysRevA.99.042310

Huang W; Yang CH; Chan KW; Tanttu T; Hensen B; Leon RCC; Fogarty MA; Hwang JCC; Hudson FE; Itoh KM; Morello A; Laucht A; Dzurak AS, 2018, Fidelity benchmarks for two-qubit gates in silicon, http://dx.doi.org/10.1038/s41586-019-1197-0

Chan KW; Huang W; Yang CH; Hwang JCC; Hensen B; Tanttu T; Hudson FE; Itoh KM; Laucht A; Morello A; Dzurak AS, 2018, Assessment of a silicon quantum dot spin qubit environment via noise spectroscopy, http://dx.doi.org/10.1103/PhysRevApplied.10.044017

Liles SD; Li R; Yang CH; Hudson FE; Veldhorst M; Dzurak AS; Hamilton AR, 2018, Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot, http://dx.doi.org/10.1038/s41467-018-05700-9

Fogarty MA; Chan KW; Hensen B; Huang W; Tanttu T; Yang CH; Laucht A; Veldhorst M; Hudson FE; Itoh KM; Culcer D; Morello A; Dzurak AS, 2017, Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout, http://dx.doi.org/10.1038/s41467-018-06039-x

Ferdous R; Chan KW; Veldhorst M; Hwang JCC; Yang CH; Klimeck G; Morello A; Dzurak AS; Rahman R, 2017, Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability, http://dx.doi.org/10.1103/PhysRevB.97.241401

Gamble JK; Harvey-Collard P; Jacobson NT; Baczewski AD; Nielsen E; Maurer L; Montaño I; Rudolph M; Carroll MS; Yang CH; Rossi A; Dzurak AS; Muller RP, 2016, Valley splitting of single-electron Si MOS quantum dots, http://dx.doi.org/10.1063/1.4972514

Veldhorst M; Eenink HGJ; Yang CH; Dzurak AS, 2016, Silicon CMOS architecture for a spin-based quantum computer, http://dx.doi.org/10.48550/arxiv.1609.09700

Hwang JCC; Yang CH; Veldhorst M; Hendrickx N; Fogarty MA; Huang W; Hudson FE; Morello A; Dzurak AS, 2016, Impact of g-factors and valleys on spin qubits in a silicon double quantum dot, http://dx.doi.org/10.1103/PhysRevB.96.045302

Veldhorst M; Ruskov R; Yang CH; Hwang JCC; Hudson FE; Flatté ME; Tahan C; Itoh KM; Morello A; Dzurak AS, 2015, Spin-orbit coupling and operation of multi-valley spin qubits, http://dx.doi.org/10.48550/arxiv.1505.01213

Fogarty MA; Veldhorst M; Harper R; Yang CH; Bartlett SD; Flammia ST; Dzurak AS, 2015, Non-exponential Fidelity Decay in Randomized Benchmarking with Low-Frequency Noise, http://dx.doi.org/10.48550/arxiv.1502.05119

Veldhorst M; Yang CH; Hwang JCC; Huang W; Dehollain JP; Muhonen JT; Simmons S; Laucht A; Hudson FE; Itoh KM; Morello A; Dzurak AS, 2014, A Two Qubit Logic Gate in Silicon, http://dx.doi.org/10.48550/arxiv.1411.5760

Veldhorst M; Hwang JCC; Yang CH; Leenstra AW; de Ronde B; Dehollain JP; Muhonen JT; Hudson FE; Itoh KM; Morello A; Dzurak AS, 2014, An addressable quantum dot qubit with fault-tolerant control fidelity, http://dx.doi.org/10.48550/arxiv.1407.1950

Yang CH; Rossi A; Lai NS; Leon R; Lim WH; Dzurak AS, 2014, Charge State Hysteresis in Semiconductor Quantum Dots, http://dx.doi.org/10.48550/arxiv.1407.1625

Zimmerman NM; Yang C-H; Lai NS; Lim WH; Dzurak AS, 2014, Charge Offset Stability in Si Single Electron Devices with Al Gates, http://dx.doi.org/10.1088/0957-4484/25/40/405201

Jiang L; Yang CH; Pan Z; Rossi A; Dzurak AS; Culcer D, 2013, Coulomb interaction and valley-orbit coupling in Si quantum dots, http://dx.doi.org/10.48550/arxiv.1308.2728

Yang CH; Rossi A; Ruskov R; Lai NS; Mohiyaddin FA; Lee S; Tahan C; Klimeck G; Morello A; Dzurak AS, 2013, Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting, http://dx.doi.org/10.48550/arxiv.1302.0983

Yang CH; Lim WH; Lai NS; Rossi A; Morello A; Dzurak AS, 2012, Orbital and valley state spectra of a few-electron silicon quantum dot, http://dx.doi.org/10.48550/arxiv.1204.0843

Yang CH; Lim WH; Zwanenburg FA; Dzurak AS, 2011, Dynamically controlled charge sensing of a few-electron silicon quantum dot, http://dx.doi.org/10.48550/arxiv.1107.1557

Lim WH; Yang CH; Zwanenburg FA; Dzurak AS, 2011, Spin filling of valley-orbit states in a silicon quantum dot, http://dx.doi.org/10.48550/arxiv.1103.2895

Lai NS; Lim WH; Yang CH; Zwanenburg FA; Coish WA; Qassemi F; Morello A; Dzurak AS, 2010, Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot, http://dx.doi.org/10.48550/arxiv.1012.1410

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