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Preprints

Laucht A; Hohls F; Ubbelohde N; Gonzalez-Zalba MF; Reilly DJ; Stobbe S; Schröder T; Scarlino P; Koski JV; Dzurak A; Yang C-H; Yoneda J; Kuemmeth F; Bluhm H; Pla J; Hill C; Salfi J; Oiwa A; Muhonen JT; Verhagen E; LaHaye MD; Kim HH; Tsen AW; Culcer D; Geresdi A; Mol JA; Mohan V; Jain PK; Baugh J, 2021, Roadmap on quantum nanotechnologies, http://dx.doi.org/10.48550/arxiv.2101.07882

Vahapoglu E; Slack-Smith JP; Leon RCC; Lim WH; Hudson FE; Day T; Tanttu T; Yang CH; Laucht A; Dzurak AS; Pla JJ, 2020, Single-electron spin resonance in a nanoelectronic device using a global field, http://dx.doi.org/10.1126/sciadv.abg9158

Liles SD; Martins F; Miserev DS; Kiselev AA; Thorvaldson ID; Rendell MJ; Jin IK; Hudson FE; Veldhorst M; Itoh KM; Sushkov OP; Ladd TD; Dzurak AS; Hamilton AR, 2020, Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot, http://dx.doi.org/10.1103/PhysRevB.104.235303

Gonzalez-Zalba MF; de Franceschi S; Charbon E; Meunier T; Vinet M; Dzurak AS, 2020, Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives, http://dx.doi.org/10.48550/arxiv.2011.11753

Leon RCC; Yang CH; Hwang JCC; Lemyre JC; Tanttu T; Huang W; Huang JY; Hudson FE; Itoh KM; Laucht A; Pioro-Ladrière M; Saraiva A; Dzurak AS, 2020, Bell-state tomography in a silicon many-electron artificial molecule, http://dx.doi.org/10.1038/s41467-021-23437-w

Yoneda J; Huang W; Feng M; Yang CH; Chan KW; Tanttu T; Gilbert W; Leon RCC; Hudson FE; Itoh KM; Morello A; Bartlett SD; Laucht A; Saraiva A; Dzurak AS, 2020, Coherent spin qubit transport in silicon, http://dx.doi.org/10.1038/s41467-021-24371-7

Mądzik MT; Laucht A; Hudson FE; Jakob AM; Johnson BC; Jamieson DN; Itoh KM; Dzurak AS; Morello A, 2020, Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device, http://dx.doi.org/10.1038/s41467-020-20424-5

Gilbert W; Saraiva A; Lim WH; Yang CH; Laucht A; Bertrand B; Rambal N; Hutin L; Escott CC; Vinet M; Dzurak AS, 2020, Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing, http://dx.doi.org/10.48550/arxiv.2004.11558

Chan KW; Sahasrabudhe H; Huang W; Wang Y; Yang HC; Veldhorst M; Hwang JCC; Mohiyaddin FA; Hudson FE; Itoh KM; Saraiva A; Morello A; Laucht A; Rahman R; Dzurak AS, 2020, Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon, http://dx.doi.org/10.1021/acs.nanolett.0c04771

Seedhouse A; Tanttu T; Leon RCC; Zhao R; Tan KY; Hensen B; Hudson FE; Itoh KM; Yoneda J; Yang CH; Morello A; Laucht A; Coppersmith SN; Saraiva A; Dzurak AS, 2020, Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control, http://dx.doi.org/10.1103/PRXQuantum.2.010303

Jenei M; Zhao R; Tan KY; Tanttu T; Chan KW; Sun Y; Sevriuk V; Hudson F; Rossi A; Dzurak A; Möttönen M, 2019, Superconducting charge sensor coupled to an electron layer in silicon, http://arxiv.org/abs/1909.11976v1

Jenei M; Potanina E; Zhao R; Tan KY; Rossi A; Tanttu T; Chan KW; Sevriuk V; Möttönen M; Dzurak A, 2019, Waiting time distributions in a two-level fluctuator coupled to a superconducting charge detector, http://dx.doi.org/10.1103/PhysRevResearch.1.033163

Mądzik MT; Ladd TD; Hudson FE; Itoh KM; Jakob AM; Johnson BC; Jamieson DN; McCallum JC; Dzurak AS; Laucht A; Morello A, 2019, Controllable freezing of the nuclear spin bath in a single-atom spin qubit, http://dx.doi.org/10.1126/sciadv.aba3442

Asaad S; Mourik V; Joecker B; Johnson MAI; Baczewski AD; Firgau HR; Mądzik MT; Schmitt V; Pla JJ; Hudson FE; Itoh KM; McCallum JC; Dzurak AS; Laucht A; Morello A, 2019, Coherent electrical control of a single high-spin nucleus in silicon, http://dx.doi.org/10.1038/s41586-020-2057-7

Hensen B; Huang WW; Yang C-H; Chan KW; Yoneda J; Tanttu T; Hudson FE; Laucht A; Itoh KM; Ladd TD; Morello A; Dzurak AS, 2019, A silicon quantum-dot-coupled nuclear spin qubit, http://dx.doi.org/10.48550/arxiv.1904.08260

Yang CH; Leon RCC; Hwang JCC; Saraiva A; Tanttu T; Huang W; Lemyre JC; Chan KW; Tan KY; Hudson FE; Itoh KM; Morello A; Pioro-Ladrière M; Laucht A; Dzurak AS, 2019, Silicon quantum processor unit cell operation above one Kelvin, http://dx.doi.org/10.1038/s41586-020-2171-6

Leon RCC; Yang CH; Hwang JCC; Lemyre JC; Tanttu T; Huang W; Chan KW; Tan KY; Hudson FE; Itoh KM; Morello A; Laucht A; Pioro-Ladriere M; Saraiva A; Dzurak AS, 2019, Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot, http://dx.doi.org/10.1038/s41467-019-14053-w

Zhao R; Tanttu T; Tan KY; Hensen B; Chan KW; Hwang JCC; Leon RCC; Yang CH; Gilbert W; Hudson FE; Itoh KM; Kiselev AA; Ladd TD; Morello A; Laucht A; Dzurak AS, 2018, Single-spin qubits in isotopically enriched silicon at low magnetic field, http://dx.doi.org/10.48550/arxiv.1812.08347

Tenberg SB; Asaad S; Mądzik MT; Johnson MAI; Joecker B; Laucht A; Hudson FE; Itoh KM; Jakob AM; Johnson BC; Jamieson DN; McCallum JC; Dzurak AS; Joynt R; Morello A, 2018, Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices, http://dx.doi.org/10.1103/PhysRevB.99.205306

Zeng J; Yang CH; Dzurak AS; Barnes E, 2018, Geometric formalism for constructing arbitrary single-qubit dynamically corrected gates, http://dx.doi.org/10.1103/PhysRevA.99.052321

West A; Hensen B; Jouan A; Tanttu T; Yang CH; Rossi A; Gonzalez-Zalba MF; Hudson FE; Morello A; Reilly DJ; Dzurak AS, 2018, Gate-based single-shot readout of spins in silicon, http://dx.doi.org/10.1038/s41565-019-0400-7

Tanttu T; Hensen B; Chan KW; Yang H; Huang W; Fogarty M; Hudson F; Itoh K; Culcer D; Laucht A; Morello A; Dzurak A, 2018, Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction, http://dx.doi.org/10.1103/PhysRevX.9.021028

Yang CH; Chan KW; Harper R; Huang W; Evans T; Hwang JCC; Hensen B; Laucht A; Tanttu T; Hudson FE; Flammia ST; Itoh KM; Morello A; Bartlett SD; Dzurak AS, 2018, Silicon qubit fidelities approaching incoherent noise limits via pulse engineering, http://dx.doi.org/10.1038/s41928-019-0234-1

Huang C-H; Yang CH; Chen C-C; Dzurak AS; Goan H-S, 2018, High-fidelity and robust two-qubit gates for quantum-dot spin qubits in silicon, http://dx.doi.org/10.1103/PhysRevA.99.042310

Huang W; Yang CH; Chan KW; Tanttu T; Hensen B; Leon RCC; Fogarty MA; Hwang JCC; Hudson FE; Itoh KM; Morello A; Laucht A; Dzurak AS, 2018, Fidelity benchmarks for two-qubit gates in silicon, http://dx.doi.org/10.48550/arxiv.1805.05027

Chan KW; Huang W; Yang CH; Hwang JCC; Hensen B; Tanttu T; Hudson FE; Itoh KM; Laucht A; Morello A; Dzurak AS, 2018, Assessment of a silicon quantum dot spin qubit environment via noise spectroscopy, http://dx.doi.org/10.48550/arxiv.1803.01609

Tagliaferri MLV; Bavdaz PL; Huang W; Dzurak AS; Culcer D; Veldhorst M, 2018, Impact of valley phase and splitting on readout of silicon spin qubits, http://dx.doi.org/10.48550/arxiv.1803.01811

Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, Gigahertz Single-Electron Pumping Mediated by Parasitic States, http://dx.doi.org/10.48550/arxiv.1803.00791

Liles SD; Li R; Yang CH; Hudson FE; Veldhorst M; Dzurak AS; Hamilton AR, 2018, Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot, http://dx.doi.org/10.1038/s41467-018-05700-9

Ruskov R; Veldhorst M; Dzurak AS; Tahan C, 2017, Electron g-factor of valley states in realistic silicon quantum dots, http://dx.doi.org/10.48550/arxiv.1708.04555

Fogarty MA; Chan KW; Hensen B; Huang W; Tanttu T; Yang CH; Laucht A; Veldhorst M; Hudson FE; Itoh KM; Culcer D; Morello A; Dzurak AS, 2017, Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout, http://dx.doi.org/10.1038/s41467-018-06039-x

Zhao R; Rossi A; Giblin SP; Fletcher JD; Hudson FE; Möttönen M; Kataoka M; Dzurak AS, 2017, Thermal-error regime in high-accuracy gigahertz single-electron pumping, http://dx.doi.org/10.48550/arxiv.1703.04795

Ferdous R; Chan KW; Veldhorst M; Hwang JCC; Yang CH; Klimeck G; Morello A; Dzurak AS; Rahman R, 2017, Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability, http://dx.doi.org/10.1103/PhysRevB.97.241401

Muhonen JT; Dehollain JP; Laucht A; Simmons S; Kalra R; Hudson FE; Jamieson DN; McCallum JC; Itoh KM; Dzurak AS; Morello A, 2017, Coherent control via weak measurements in $^{31}$P single-atom electron and nuclear spin qubits, http://dx.doi.org/10.48550/arxiv.1702.07991

Vandersypen LMK; Bluhm H; Clarke JS; Dzurak AS; Ishihara R; Morello A; Reilly DJ; Schreiber LR; Veldhorst M, 2016, Interfacing spin qubits in quantum dots and donors - hot, dense and coherent, http://dx.doi.org/10.48550/arxiv.1612.05936

Gamble JK; Harvey-Collard P; Jacobson NT; Baczewski AD; Nielsen E; Maurer L; Montaño I; Rudolph M; Carroll MS; Yang CH; Rossi A; Dzurak AS; Muller RP, 2016, Valley splitting of single-electron Si MOS quantum dots, http://dx.doi.org/10.48550/arxiv.1610.03388

Rossi A; Zhao R; Dzurak AS; Gonzalez-Zalba MF, 2016, Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor, http://dx.doi.org/10.48550/arxiv.1610.00767

Veldhorst M; Eenink HGJ; Yang CH; Dzurak AS, 2016, Silicon CMOS architecture for a spin-based quantum computer, http://dx.doi.org/10.48550/arxiv.1609.09700

Hwang JCC; Yang CH; Veldhorst M; Hendrickx N; Fogarty MA; Huang W; Hudson FE; Morello A; Dzurak AS, 2016, Impact of g-factors and valleys on spin qubits in a silicon double quantum dot, http://dx.doi.org/10.48550/arxiv.1608.07748

Freer S; Simmons S; Laucht A; Muhonen JT; Dehollain JP; Kalra R; Mohiyaddin FA; Hudson F; Itoh KM; McCallum JC; Jamieson DN; Dzurak AS; Morello A, 2016, A single-atom quantum memory in silicon, http://dx.doi.org/10.48550/arxiv.1608.07109

Jones C; Fogarty MA; Morello A; Gyure MF; Dzurak AS; Ladd TD, 2016, A logical qubit in a linear array of semiconductor quantum dots, http://dx.doi.org/10.48550/arxiv.1608.06335

Huang W; Veldhorst M; Zimmerman NM; Dzurak AS; Culcer D, 2016, An electrically driven spin qubit based on valley mixing, http://dx.doi.org/10.48550/arxiv.1608.02189

Dehollain JP; Muhonen JT; Blume-Kohout R; Rudinger KM; Gamble JK; Nielsen E; Laucht A; Simmons S; Kalra R; Dzurak AS; Morello A, 2016, Optimization of a solid-state electron spin qubit using Gate Set Tomography, http://dx.doi.org/10.48550/arxiv.1606.02856

Laucht A; Simmons S; Kalra R; Tosi G; Dehollain JP; Muhonen JT; Freer S; Hudson FE; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2016, Breaking the rotating wave approximation for a strongly-driven, dressed, single electron spin, http://dx.doi.org/10.48550/arxiv.1606.02380

Laucht A; Kalra R; Simmons S; Dehollain JP; Muhonen JT; Mohiyaddin FA; Freer S; Hudson FE; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2016, A Dressed Spin Qubit in Silicon, http://dx.doi.org/10.48550/arxiv.1603.04800

Tanttu T; Rossi A; Tan KY; Mäkinen A; Chan KW; Dzurak AS; Möttönen M, 2016, Three-waveform bidirectional pumping of single electrons with a silicon quantum dot, http://dx.doi.org/10.48550/arxiv.1603.01225

Li R; Hudson FE; Dzurak AS; Hamilton AR, 2015, Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot, http://dx.doi.org/10.48550/arxiv.1509.00553

Purches WE; Rossi A; Zhao R; Kafanov S; Duty TL; Dzurak AS; Rogge S; Tettamanzi GC, 2015, A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures, http://dx.doi.org/10.48550/arxiv.1506.01224

Veldhorst M; Ruskov R; Yang CH; Hwang JCC; Hudson FE; Flatté ME; Tahan C; Itoh KM; Morello A; Dzurak AS, 2015, Spin-orbit coupling and operation of multi-valley spin qubits, http://dx.doi.org/10.48550/arxiv.1505.01213

Dehollain JP; Simmons S; Muhonen JT; Kalra R; Laucht A; Hudson F; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2015, Bell's inequality violation with spins in silicon, http://dx.doi.org/10.48550/arxiv.1504.03112


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