By Professor Renate Judith Egan

Journal articles

TANSLEY TL; EGAN RJ, 1992, 'OPTICAL AND ELECTRONIC-PROPERTIES OF THE NITRIDES OF INDIUM, GALLIUM AND ALUMINUM AND THE INFLUENCE OF NATIVE DEFECTS', WIDE BAND GAP SEMICONDUCTORS, 242, pp. 395 - 407, http://dx.doi.org/10.1557/PROC-242-395

Chin VWL; Egan RJ; Tansley TL, 1991, 'Electron mobility in InAs1-xSbx and the effect of alloy scattering', Journal of Applied Physics, 69, pp. 3571 - 3577, http://dx.doi.org/10.1063/1.348499

Tansley TL; Egan RJ; Horrigan EC, 1988, 'Properties of sputtered nitride semiconductors', Thin Solid Films, 164, pp. 441 - 448, http://dx.doi.org/10.1016/0040-6090(88)90174-5

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