By Professor Ewa Magdalena Goldys

Journal articles

Sudesh V; Piper JA; Goldys EM; Seymour RS, 1998, 'Growth, characterization, and laser potential of Tm:La2Be2O5', Journal of the Optical Society of America B Optical Physics, 15, pp. 239 - 246, http://dx.doi.org/10.1364/JOSAB.15.000239

Godlewski M; Holz PO; Bergman JP; Monemar B; Reginski K; Bugajski A; Goldys EM; Tansley TL, 1998, 'Inter-island energy transfer and in-plane exciton migration in AlGaAs/GaAs quantum wells detected by exciton dynamics', Superlattices and Microstructures, 23, pp. 107 - 111, http://dx.doi.org/10.1006/spmi.1996.0290

Goldys EM; Shi JJ, 1998, 'Linear and Nonlinear Intersubband Optical Absorption in a Strained Double Barrier Quantum Well', Physica Status Solidi B Basic Research, 210, pp. 237 - 248, http://dx.doi.org/10.1002/(SICI)1521-3951(199811)210:1<237::AID-PSSB237>3.0.CO;2-V

Goldys EM; Paterson MJ; Zuo HY; Tansley TL, 1998, 'Low temperature growth of gallium nitride on quartz and sapphire substrates', Materials Science Forum, 264-268, pp. 1205 - 1208, http://dx.doi.org/10.4028/www.scientific.net/msf.264-268.1205

Godlewski M; Suski T; Grzegory I; Porowski S; Langer R; Barski A; Bergman JP; Monemar B; Goldys EM; Phillips MR, 1998, 'Mechanisms of yellow and red photoluminescence in wurtzite and cubic GaN', Acta Physica Polonica A, 94, pp. 326 - 330, http://dx.doi.org/10.12693/APhysPolA.94.326

Godlewski M; Goldys EM; Philips MR; Bergman JP; Monemar B; Langer R; Barski A, 1998, 'Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si', MRS Internet Journal of Nitride Semiconductor Research, 3, http://dx.doi.org/10.1557/S109257830000123X

Goldys EM; Godlewski M; Tansley TL, 1998, 'Morphology and optical properties of laser-assisted chemical vapour deposited GaN', Acta Physica Polonica A, 94, pp. 331 - 335, http://dx.doi.org/10.12693/APhysPolA.94.331

Godlewski M; Holtz PO; Bergman JP; Monemar B; Regiński K; Bugajski M; Goldys EM; Tansley TL, 1997, 'Interisland exciton migration and enhanced bound exciton recombination in an AlGaAs/GaAs quantum well structure grown by molecular beam epitaxy without growth interruptions at interfaces', Semiconductor Science and Technology, 12, pp. 1416 - 1421, http://dx.doi.org/10.1088/0268-1242/12/11/014

Goldys EM; Zuo HY; Phillips MR; Contessa CM; Vaughan MR; Tansley TL, 1997, 'Type I and type II alignment of the light hole band in In0.15Ga0.85As/GaAs and in In0.15Ga0.85As/Al0.15Ga0.85As strained quantum wells', JOURNAL OF ELECTRONIC MATERIALS, 26, pp. 922 - 927, http://dx.doi.org/10.1007/s11664-997-0275-5

Goldys EM; Nott G; Tansley TL; Henini M; Pate MA; Hill G, 1997, 'Operation and theoretical analysis of the multiple asymmetric coupled quantum-well light modulator in the n-i-n configuration', IEEE Journal of Quantum Electronics, 33, pp. 1084 - 1088, http://dx.doi.org/10.1109/3.594869

Arifin P; Tansley TL; Goldys EM, 1997, 'Conduction mechanism in a metal-insulator-semiconductor structure with a low temperature GaAs insulating layer', Solid State Electronics, 41, pp. 1075 - 1078, http://dx.doi.org/10.1016/S0038-1101(97)00061-0

Godlewski M; Ivanov VY; Kamińska A; Zuo HY; Goldys EM; Tansley TL; Barski A; Rossner U; Rouvicre JL; Arlery M; Grzegory I; Suski T; Porowski S; Bergman JP; Monemar B, 1997, 'On the origin of the yellow donor-acceptor pair emission in GaN', Materials Science Forum, 258-263, pp. 1149 - 1154, http://dx.doi.org/10.4028/www.scientific.net/msf.258-263.1149

Goldys EM; Zuo HY; Phillips MR; Contessa CM; Vaughan MR; Tansley TL, 1997, 'Type I and type II alignment of the light hole band in In0.15Ga0.85As/GaAs and in In0.15Ga0.85As/Al0.15Ga0.85As strained quantum wells', Journal of Electronic Materials, 26, pp. 922 - 927, http://dx.doi.org/10.1007/s11664-997-0275-5

Goldys EM; Mitchell A; Tansley TL; Egan RJ; Clark A, 1996, 'Photoreflectance of AlxGa1-xAs/GaAs and GaAs/GaAs interfaces at high light intensities', Optics Communications, 124, pp. 392 - 399, http://dx.doi.org/10.1016/0030-4018(95)00694-X

Goldys EM; Nott G; Tansley TL; Henini M; Pate MA; Hill G, 1995, 'Current-voltage nonlinearity in the multiquantum well nin modulator structure', Electronics Letters, 31, pp. 2040 - 2041, http://dx.doi.org/10.1049/el:19951366

Arifin P; Goldys EM; Tansley TL, 1995, 'Electron mobility in low temperature grown gallium arsenide', Materials Science and Engineering B, 35, pp. 330 - 333, http://dx.doi.org/10.1016/0921-5107(95)01347-4

Galiev VI; Goldys EM; Novak MG; Polupanov AF; Tansley TL, 1995, 'Exact hole-bound states for semiconductor quantum wells with arbitrary potential profiles', Superlattices and Microstructures, 17, pp. 421 - 429, http://dx.doi.org/10.1006/spmi.1995.1075

Arifin P; Goldys E; Tansley TL, 1995, 'Monte Carlo simulation of electron drift velocity in low-temperature-grown gallium arsenide in a Schottky-barrier model', Physical Review B, 52, pp. 5708 - 5713, http://dx.doi.org/10.1103/PhysRevB.52.5708

Goldys EM; Chin VWL; Tansley TL; Vaughan MR, 1994, 'Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple-quantum-well structure', Journal of Applied Physics, 75, pp. 4194 - 4200, http://dx.doi.org/10.1063/1.356004

Osotchan T; Chin VWL; Vaughan MR; Tansley TL; Goldys EM, 1994, 'Electronic band structure of AlxGa1-xAs/AlyGa1-yAs/GaAs double-barrier superlattices', Physical Review B, 50, pp. 2409 - 2419, http://dx.doi.org/10.1103/PhysRevB.50.2409

Goldys EM; Tansley TL, 1994, 'Quantum confined light modulators', Microelectronics Journal, 25, pp. 697 - 712, http://dx.doi.org/10.1016/0026-2692(94)90135-X

Goldys EM; Barczynska J; Godlewski M; Sienkiewicz A; Heijmink Liesert BJ, 1993, 'Germanium-doped gallium phosphide obtained by neutron irradiation', Journal of Applied Physics, 74, pp. 2287 - 2293, http://dx.doi.org/10.1063/1.354712

Davies AG; Brown SA; Dunford RB; Goldys EM; Newbury R; Clark RG; Simmonds PE; Harris JJ; Foxon CT, 1993, 'High-field photoluminescence in GaAs single heterojunctions. Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition', Physica B Physics of Condensed Matter, 184, pp. 56 - 65, http://dx.doi.org/10.1016/0921-4526(93)90321-V

Goldys EM; Brown SA; Dunford RB; Davies AG; Newbury R; Clark RG; Simmonds PE; Harris JJ; Foxon CT, 1992, 'Magneto-optical probe of two-dimensional electron liquid and solid phases', Physical Review B, 46, pp. 7957 - 7960, http://dx.doi.org/10.1103/PhysRevB.46.7957

Brown SA; Davies AG; Dunford RB; Goldys EM; Newbury R; Clark RG; Simmonds PE; Harris JJ; Foxon CT, 1992, 'Magneto-photoluminescence studies of a 2D electron system: Signatures of the fractional quantum Hall effect and Wigner solid', Superlattices and Microstructures, 12, pp. 433 - 442, http://dx.doi.org/10.1016/0749-6036(92)90296-H

LIESERT BJH; GODLEWSKI M; GREGORKIEWICZ T; AMMERLAAN CAJ; GOLDYS E, 1991, 'NEUTRON TRANSMUTATION DOPED GAP - OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES', ACTA PHYSICA POLONICA A, 79, pp. 401 - 404, http://dx.doi.org/10.12693/APhysPolA.79.401

BABINSKI A; GOLDYS E, 1991, 'PASSIVATION OF A BULK DEFECT EC-0.22 EV IN GAAS BY CONTACT WITH PHOSPHORIC-ACID', ACTA PHYSICA POLONICA A, 79, pp. 277 - 280, http://dx.doi.org/10.12693/APhysPolA.79.277

GOLDYS E; GODLEWSKI M; SIENKIEWICZ A, 1991, 'THE LUMINESCENCE AND EPR CHARACTERIZATION OF NEUTRON TRANSMUTATION DOPED GALLIUM-PHOSPHIDE', ACTA PHYSICA POLONICA A, 79, pp. 259 - 262, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1991FQ50500024&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

BARCZYNSKA J; GOLDYS E, 1990, 'NEW, GERMANIUM-RELATED DEFECT IN NEUTRON-IRRADIATED GALLIUM-PHOSPHIDE', IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES, 163, pp. 179 - 184, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1990BR53C00028&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Goldys E, 1989, 'Photoionisation and Inter (Conduction) Band Absorption in S and Te Doped Gallium Phosphide', Physica Status Solidi B, 154, pp. 397 - 404, http://dx.doi.org/10.1002/pssb.2221540141

Khanh DN; Goldys E; Grynberg M, 1989, 'Resonance scattering of photoexcited electrons in n-GaP', Solid State Communications, 72, pp. 959 - 962, http://dx.doi.org/10.1016/0038-1098(89)90436-5

Goldys E; Galtier P; Martinez G; Gorczyca I, 1987, 'Low-temperature infrared absorption of n-type GaP', Physical Review B, 36, pp. 9662 - 9670, http://dx.doi.org/10.1103/PhysRevB.36.9662

Pastor K; Gołdys E, 1985, 'Observation of cyclotron resonance halfwidth in pure n-CdTe', Solid State Communications, 55, pp. 671 - 674, http://dx.doi.org/10.1016/0038-1098(85)90230-3

Goldys EM, 1984, 'The Donor Wave Functions in Gallium Phosphide and the Real Band Structure', Physica Status Solidi B, 124, pp. K79 - K82, http://dx.doi.org/10.1002/pssb.2221240165

Goldys E; Gortel ZW; Kreuzer HJ, 1982, 'Desorption kinetics mediated by surface phonon modes', Surface Science, 116, pp. 33 - 65, http://dx.doi.org/10.1016/0039-6028(82)90678-1

Goldys E; Gortel ZW; Kreuzer HJ, 1982, 'Desorption kinetics mediated by surface phonon modes', Surface Science Letters, 116, pp. A148 - A148, http://dx.doi.org/10.1016/0167-2584(82)90370-x

Goldys E; Gortel ZW; Kreuzer HJ, 1981, 'Surface Debye temperature in desorption kinetics', Solid State Communications, 40, pp. 963 - 965, http://dx.doi.org/10.1016/0038-1098(81)90044-2

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